InGaAs-InP core–shell nanowire/Si junction for vertical tunnel field-effect transistor
Tomioka, Katsuhiro, Ishizaka, Fumiya, Motohisa, Junichi, Fukui, Takashi
Published in Applied physics letters (21.09.2020)
Published in Applied physics letters (21.09.2020)
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Journal Article
Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array
Ishizaka, Fumiya, Hiraya, Yoshihiro, Tomioka, Katsuhiro, Motohisa, Junichi, Fukui, Takashi
Published in Nano letters (08.03.2017)
Published in Nano letters (08.03.2017)
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Journal Article
Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy
Yoshida, Akinobu, Tomioka, Katsuhiro, Ishizaka, Fumiya, Motohisa, Junichi
Published in Journal of crystal growth (15.04.2017)
Published in Journal of crystal growth (15.04.2017)
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Journal Article
Bidirectional Growth of Indium Phosphide Nanowires
Ikejiri, Keitaro, Ishizaka, Fumiya, Tomioka, Katsuhiro, Fukui, Takashi
Published in Nano letters (12.09.2012)
Published in Nano letters (12.09.2012)
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Journal Article
Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer
Hiraya, Yoshihiro, Ishizaka, Fumiya, Tomioka, Katsuhiro, Fukui, Takashi
Published in Applied physics express (01.03.2016)
Published in Applied physics express (01.03.2016)
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Journal Article
Growth of wurtzite GaP in InP/GaP core–shell nanowires by selective-area MOVPE
Ishizaka, Fumiya, Hiraya, Yoshihiro, Tomioka, Katsuhiro, Fukui, Takashi
Published in Journal of crystal growth (01.02.2015)
Published in Journal of crystal growth (01.02.2015)
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Journal Article
GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE
Ikejiri, Keitaro, Ishizaka, Fumiya, Tomioka, Katsuhiro, Fukui, Takashi
Published in Nanotechnology (22.03.2013)
Published in Nanotechnology (22.03.2013)
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Journal Article
Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications
Yoshida, Akinobu, Tomioka, Katsuhiro, Ishizaka, Fumiya, Chiba, Kohei, Motohisa, Junichi
Published in ECS transactions (01.10.2016)
Published in ECS transactions (01.10.2016)
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Journal Article
Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch
Tomioka, Katsuhiro, Yoshimura, Masatoshi, Nakai, Eiji, Ishizaka, Fumiya, Fukui, Takashi
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
Published in 2013 IEEE International Electron Devices Meeting (01.12.2013)
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Conference Proceeding
Journal Article
Heterogeneous Integration of InGaAs Nanowires on Si(111) for Si Photonics
Chiba, Kohei, Tomioka, Katsuhiro, Ishizaka, Fumiya, Yoshida, Akinobu, Motohisa, Junichi
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
Published in Meeting abstracts (Electrochemical Society) (01.09.2016)
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Journal Article
Selective-area growth of InGaAs/InP/InAlAs/InP core-multishell nanowires on Si and tunneling transistor application
Tomioka, Katsuhiro, Ishizaka, Fumiya, Motohisa, Junichi, Fukui, Takashi
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
Published in 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) (01.06.2016)
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Conference Proceeding