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Year of Publication 22.12.2022
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Year of Publication 22.12.2022
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Impact of reducing STI-induced stress on layout dependence of MOSFET characteristics
Miyamoto, M., Ohta, H., Kumagai, Y., Sonobe, Y., Ishibashi, K., Tainaka, Y.
Published in IEEE transactions on electron devices (01.03.2004)
Published in IEEE transactions on electron devices (01.03.2004)
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Semiconductor device including active regions and gate electrodes for field effect transistors, with a trench formed between the active regions
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Year of Publication 17.04.2007
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Semiconductor device including active regions and gate electrodes for field effect transistors, with a trench formed between the active regions
TAINAKA YASUSHI, MIYAMOTO MASAFUMI, OHTA HIROYUKI, ISHIBASHI KOUSUKE, SONOBE YASUO, KUMAGAI YUKIHIRO, MIURA HIDEO
Year of Publication 17.04.2007
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Year of Publication 17.04.2007
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Semiconductor device
TAINAKA YASUSHI, MIYAMOTO MASAFUMI, OHTA HIROYUKI, ISHIBASHI KOUSUKE, SONOBE YASUO, KUMAGAI YUKIHIRO, MIURA HIDEO
Year of Publication 10.07.2003
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Year of Publication 10.07.2003
Patent
Semiconductor device
Kumagai, Yukihiro, Ohta, Hiroyuki, Sonobe, Yasuo, Ishibashi, Kousuke, Tainaka, Yasushi, Miyamoto, Masafumi, Miura, Hideo
Year of Publication 10.07.2003
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Year of Publication 10.07.2003
Patent