Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire
Sato, Kosuke, Yasue, Shinji, Yamada, Kazuki, Tanaka, Shunya, Omori, Tomoya, Ishizuka, Sayaka, Teramura, Shohei, Ogino, Yuya, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.03.2020)
Published in Applied physics express (01.03.2020)
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Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures
Lu, Weifang, Ito, Kazuma, Sone, Naoki, Okuda, Renji, Miyamoto, Yoshiya, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied surface science (15.02.2021)
Published in Applied surface science (15.02.2021)
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Journal Article
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
Ban, Kazuhito, Yamamoto, Jun-ichi, Takeda, Kenichiro, Ide, Kimiyasu, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Applied physics express (01.05.2011)
Published in Applied physics express (01.05.2011)
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Growth and Characterization of Core-Shell Structures Consisting of GaN Nanowire Core and GaInN/GaN Multi-Quantum Shell
Kamiyama, Satoshi, Lu, Weifang, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Published in ECS journal of solid state science and technology (29.10.2019)
Published in ECS journal of solid state science and technology (29.10.2019)
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Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers
Kawase, Yuta, Ikeda, Syunya, Sakuragi, Yusuke, Yasue, Shinji, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires
Lu, Weifang, Sone, Naoki, Goto, Nanami, Iida, Kazuyoshi, Suzuki, Atsushi, Han, Dong-Pyo, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Nanoscale (28.10.2019)
Published in Nanoscale (28.10.2019)
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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes
Shimokawa, Moe, Teramura, Shohei, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Ogino, Yuya, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto
Published in Journal of crystal growth (01.12.2021)
Published in Journal of crystal growth (01.12.2021)
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Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing
Hakamata, Junya, Kawase, Yuta, Dong, Lin, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Akasaki, Isamu
Published in physica status solidi (b) (01.05.2018)
Published in physica status solidi (b) (01.05.2018)
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In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps
Hiraiwa, Kei, Muranaga, Wataru, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Journal of crystal growth (01.02.2020)
Published in Journal of crystal growth (01.02.2020)
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Journal Article
Morphology Control and Crystalline Quality of p‑Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires
Lu, Weifang, Nakayama, Nanami, Ito, Kazuma, Katsuro, Sae, Sone, Naoki, Miyamoto, Yoshiya, Okuno, Koji, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in ACS applied materials & interfaces (17.11.2021)
Published in ACS applied materials & interfaces (17.11.2021)
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Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers
Sato, Kosuke, Yasue, Shinji, Ogino, Yuya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
Chichibu, Shigefusa F, Uedono, Akira, Onuma, Takeyoshi, Haskell, Benjamin A, Chakraborty, Arpan, Koyama, Takahiro, Fini, Paul T, Keller, Stacia, DenBaars, Steven P, Speck, James S, Mishra, Umesh K, Nakamura, Shuji, Yamaguchi, Shigeo, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Han, Jung, Sota, Takayuki
Published in Nature materials (01.10.2006)
Published in Nature materials (01.10.2006)
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