Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctions
Kiyohara, Kazuki, Odawara, Mahito, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu, Saito, Tatsuma
Published in Applied physics express (01.11.2020)
Published in Applied physics express (01.11.2020)
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Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping
Omori, Tomoya, Ishizuka, Sayaka, Tanaka, Shunya, Yasue, Shinji, Sato, Kosuke, Ogino, Yuya, Teramura, Shohei, Yamada, Kazuki, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.07.2020)
Published in Applied physics express (01.07.2020)
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High Crystallinity and Highly Relaxed Al0.60Ga0.40N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing
Teramura, Shohei, Kawase, Yuta, Sakuragi, Yusuke, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
Published in Physica status solidi. A, Applications and materials science (01.07.2020)
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Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers with n-type conducting AlInN/GaN distributed Bragg reflectors
Ikeyama, Kazuki, Kozuka, Yugo, Matsui, Kenjo, Yoshida, Shotaro, Akagi, Takanobu, Akatsuka, Yasuto, Koide, Norikatsu, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Applied physics express (01.10.2016)
Published in Applied physics express (01.10.2016)
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Structural analysis of Si-doped AlGaN/GaN multi-quantum wells
Nakamura, Tetsuya, Mochizuki, Shingo, Terao, Shinji, Sano, Tomoaki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Journal of crystal growth (01.04.2002)
Published in Journal of crystal growth (01.04.2002)
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GaN/GaInN/GaN double heterostructure light emitting diode fabricated using plasma-assisted molecular beam epitaxy
SAKAI, H, KOIDE, T, SUZUKI, H, YAMAGUCHI, M, YAMASAKI, S, KOIKE, M, AMANO, H, AKASAKI, I
Published in Japanese Journal of Applied Physics (01.11.1995)
Published in Japanese Journal of Applied Physics (01.11.1995)
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Journal Article
Low threshold current density in GaInN-based laser diodes with GaN tunnel junctions
Kato, Yuki, Miyoshi, Kohei, Takeuchi, Tetsuya, Inagaki, Tetsuro, Iwaya, Motoaki, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.06.2021)
Published in Applied physics express (01.06.2021)
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Journal Article
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
Kuwano, Yuka, Kaga, Mitsuru, Morita, Takatoshi, Yamashita, Kouji, Yagi, Kouta, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition
Lu, Weifang, Goto, Nanami, Murakami, Hedeki, Sone, Naoki, Iida, Kazuyoshi, Terazawa, Mizuki, Han, Dong-Pyo, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied surface science (15.04.2020)
Published in Applied surface science (15.04.2020)
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GaN-based vertical cavity surface emitting lasers with lateral optical confinements and conducting distributed Bragg reflectors
Iida, Ryosuke, Ueshima, Yusuke, Muranaga, Wataru, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate
Tanaka, Shunya, Teramura, Shohei, Shimokawa, Moe, Yamada, Kazuki, Omori, Tomoya, Iwayama, Sho, Sato, Kosuke, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.05.2021)
Published in Applied physics express (01.05.2021)
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Journal Article
Crystal Growth and Characterization of n‑GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction
Miyamoto, Yoshiya, Lu, Weifang, Sone, Naoki, Okuda, Renji, Ito, Kazuma, Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in ACS applied materials & interfaces (11.08.2021)
Published in ACS applied materials & interfaces (11.08.2021)
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Journal Article
The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metalorganic Vapor Phase Epitaxy
Shigeo Yamaguchi, Shigeo Yamaguchi, Michihiko Kariya, Michihiko Kariya, Shugo Nitta, Shugo Nitta, Hiroshi Amano, Hiroshi Amano, Isamu Akasaki, Isamu Akasaki
Published in Japanese Journal of Applied Physics (2000)
Published in Japanese Journal of Applied Physics (2000)
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Journal Article
Metalorganic vapor phase epitaxial growth and properties of GaN/Al0.1Ga0.9N layered structures
ITOH, K, KAWAMOTO, T, AMANO, H, HIRAMATSU, K, AKASAKI, I
Published in Japanese journal of applied physics (01.09.1991)
Published in Japanese journal of applied physics (01.09.1991)
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Journal Article
Relaxation of misfit-induced stress in nitride-based heterostructures
Terao, Shinji, Iwaya, Motoaki, Sano, Tomoaki, Nakamura, Tetsuya, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Journal of crystal growth (01.04.2002)
Published in Journal of crystal growth (01.04.2002)
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Journal Article
MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells
Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Sone, Naoki, Lu, Weifang, Okuda, Renji, Miyamoto, Yoshiya, Ito, Kazuma, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Published in Journal of crystal growth (15.01.2022)
Published in Journal of crystal growth (15.01.2022)
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