Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation
Yanai, Kosuke, Lu, Weifang, Yamane, Yoma, Han, Dong-Pyo, Ou, Haiyan, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Nanomaterials (Basel, Switzerland) (21.10.2020)
Published in Nanomaterials (Basel, Switzerland) (21.10.2020)
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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
Nagamatsu, Kentaro, Okada, Narihito, Sugimura, Hiroki, Tsuzuki, Hirotoshi, Mori, Fumiaki, Iida, Kazuyoshi, Bando, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Journal of crystal growth (01.04.2008)
Published in Journal of crystal growth (01.04.2008)
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High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer
Tsuzuki, Hirotoshi, Mori, Fumiaki, Takeda, Kenichiro, Ichikawa, Tomoki, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Yoshida, Harumasa, Kuwabara, Masakazu, Yamashita, Yoji, Kan, Hirofumi
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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In situ X-ray diffraction monitoring during metalorganic vapor phase epitaxy growth of low-temperature-GaN buffer layer
Iida, Daisuke, Sowa, Mihoko, Kondo, Yasunari, Tanaka, Daiki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Journal of crystal growth (15.12.2012)
Published in Journal of crystal growth (15.12.2012)
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Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
Imura, Masataka, Fujimoto, Naoki, Okada, Narihito, Balakrishnan, Krishnan, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Noro, Tadashi, Takagi, Takashi, Bandoh, Akira
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Conference Proceeding
Correlation between Device Performance and Defects in GaInN-Based Solar Cells
Mori, Mikiko, Kondo, Shinichiro, Yamamoto, Shota, Nakao, Tatsuro, Fujii, Takahiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Applied physics express (01.08.2012)
Published in Applied physics express (01.08.2012)
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Control of growth mode in Mg-doped GaN/AlN heterostructure
Morishita, Tomohiro, Sato, Kosuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (14.02.2014)
Published in Japanese Journal of Applied Physics (14.02.2014)
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Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles
Iida, Daisuke, Fadil, Ahmed, Chen, Yuntian, Ou, Yiyu, Kopylov, Oleksii, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Ou, Haiyan
Published in AIP advances (01.09.2015)
Published in AIP advances (01.09.2015)
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Journal Article
Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
Iida, Daisuke, Nagata, Kensuke, Makino, Takafumi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Bandoh, Akira, Udagawa, Takashi
Published in Applied physics express (25.07.2010)
Published in Applied physics express (25.07.2010)
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Combination of Indium--Tin Oxide and SiO2/AlN Dielectric Multilayer Reflective Electrodes for Ultraviolet-Light-Emitting Diodes
Nakashima, Tsubasa, Takeda, Kenichiro, Shinzato, Hiroshi, Iwaya, Motoaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Akasaki, Isamu, Amano, Hiroshi
Published in Jpn J Appl Phys (01.08.2013)
Published in Jpn J Appl Phys (01.08.2013)
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Journal Article
350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
Mori, Mikiko, Kondo, Shinichiro, Yamamoto, Shota, Nakao, Tatsuro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy
Balakrishnan, Krishnan, Bandoh, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
Kim, Myunghee, Fujita, Takehiko, Fukahori, Shinya, Inazu, Tetsuhiko, Pernot, Cyril, Nagasawa, Yosuke, Hirano, Akira, Ippommatsu, Masamichi, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Yamaguchi, Masahito, Honda, Yoshio, Amano, Hiroshi, Akasaki, Isamu
Published in Applied physics express (01.09.2011)
Published in Applied physics express (01.09.2011)
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Journal Article
Advantages of the moth-eye patterned sapphire substrate for the high performance nitride based LEDs
Kondo, Toshiyuki, Kitano, Tsukasa, Suzuki, Atsushi, Mori, Midori, Naniwae, Koichi, Kamiyama, Satoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Akasaki, Isamu
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
Study on Efficiency Component Estimation of 405 nm Light Emitting Diodes from Electroluminescence and Photoluminescence Intensities
Aoyama, Kazuki, Suzuki, Atsushi, Kitano, Tsukasa, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
Suzuki, Tomoyuki, Kaga, Mitsuru, Naniwae, Kouichi, Kitano, Tsukasa, Hirano, Keisuke, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
AlGaN/GaInN/GaN heterostructure field-effect transistor
Ikki, Hiromichi, Isobe, Yasuhiro, Iida, Daisuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi, Bandoh, Akira, Udagawa, Takashi
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
Published in Physica status solidi. A, Applications and materials science (01.07.2011)
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Journal Article
Dislocation density dependence of stimulated emission characteristics in AlGaN/Al multiquantum wells
Matsubara, Yuko, Yamada, Tomoaki, Takeda, Kenichiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
Published in Physica status solidi. C (01.11.2013)
Published in Physica status solidi. C (01.11.2013)
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