Hydrogen interaction with GaN metal–insulator–semiconductor diodes
Get full text
Journal Article
Conference Proceeding
Electrical activation characteristics of silicon-implanted GaN
Irokawa, Y., Fujishima, O., Kachi, T., Nakano, Y.
Published in Journal of applied physics (15.04.2005)
Published in Journal of applied physics (15.04.2005)
Get full text
Journal Article
Comparison of surface passivation films for reduction of current collapse in AlGaN/GaN high electron mobility transistors
LUO, B, MEHANDRU, R, JENKINS, T, SEWELL, J, VIA, D, CRESPO, A, IROKAWA, Y, KIM, J, REN, F, GILA, B. P, ONSTINE, A. H, ABERNATHY, C. R, PEARTON, S. J, FITCH, R, GILLESPIE, J
Published in Journal of the Electrochemical Society (01.11.2002)
Published in Journal of the Electrochemical Society (01.11.2002)
Get full text
Journal Article
Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers
Baik, K.H., Irokawa, Y., Ren, F., Pearton, S.J., Park, S.S., Park, Y.J.
Published in Solid-state electronics (01.09.2003)
Published in Solid-state electronics (01.09.2003)
Get full text
Journal Article
Characterization of Al In GaN/GaN Heterointerface by HAADF-STEM and Electron Holography
Takeguchi, M, Okuno, H, Irokawa, Y, Sakuma, Y, Furuya, K
Published in Microscopy and microanalysis (01.08.2008)
Published in Microscopy and microanalysis (01.08.2008)
Get full text
Journal Article
Design of junction termination structures for GaN Schottky power rectifiers
Baik, K.H., Irokawa, Y., Ren, F., Pearton, S.J., Park, S.S., Park, Y.J.
Published in Solid-state electronics (01.06.2003)
Published in Solid-state electronics (01.06.2003)
Get full text
Journal Article
Charge pumping in Sc2O3∕GaN gated mos diodes
Kim, J., Mehandru, R., Luo, B., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Irokawa, Y.
Published in Electronics letters (01.08.2002)
Published in Electronics letters (01.08.2002)
Get full text
Journal Article
Lateral Schottky GaN rectifiers formed by Si+ ion implantation
IROKAWA, Y, JIHYUN KIM, REN, F, BAIK, K. H, GILA, B. P, ABERNATHY, C. R, PEARTON, S. J, PAN, C.-C, CHEN, G.-T, CHYI, J.-I
Published in Journal of electronic materials (01.05.2004)
Published in Journal of electronic materials (01.05.2004)
Get full text
Conference Proceeding
Journal Article
RHEED-ISS study on the Zr-O/W (100) surface at high temperature
IROKAWA, Y, MITSUHASHI, R, LEE, S. C, KIMURA, Y, INOUE, M, TAKAI, Y, SHIMIZU, R
Published in Surface science (10.11.1996)
Published in Surface science (10.11.1996)
Get full text
Journal Article
GaN enhancement mode metal-oxide semiconductor field effect transistors
Irokawa, Y., Nakano, Y., Ishiko, M., Kachi, T., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
Get full text
Journal Article
Effect of Carbon Impurity Incorporation on Band-Gap States in AlGaN/GaN Hetero-Structures
Nakano, Y., Irokawa, Y., Sumida, Y., Yagi, S., Kawai, H.
Published in Electrochemical and solid-state letters (01.01.2012)
Published in Electrochemical and solid-state letters (01.01.2012)
Get full text
Journal Article
RHEED-ISS study on the [formula omitted] surface at high temperature
Irokawa, Y., Mitsuhashi, R., Lee, S.C., Kimura, Y., Inoue, M., Takai, Y., Shimizu, R.
Published in Surface science (01.11.1996)
Published in Surface science (01.11.1996)
Get full text
Journal Article