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Tunnel field-effect transistors as energy-efficient electronic switches

Tunnel field-effect transistors as energy-efficient electronic switches

by Ionescu, Adrian M., Riel, Heike
Published in Nature (London) (17.11.2011)

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Journal Article

Requiem for the “Imager” in TAVR: An Irrelevant Fiction

Requiem for the “Imager” in TAVR: An Irrelevant Fiction

by Ionescu, Adrian
Published in Romanian Journal of Cardiology (01.03.2023)

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Journal Article

Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance

Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance

by Saeidi, Ali, Jazaeri, Farzan, Stolichnov, Igor, Ionescu, Adrian M.
Published in IEEE transactions on electron devices (01.12.2016)

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Journal Article

$Double-Gate Tunnel FET With High- \kappa Gate Dielectric$

Double-Gate Tunnel FET With High- \kappa Gate Dielectric

by Boucart, K., Ionescu, A.M.
Published in IEEE transactions on electron devices (01.07.2007)

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Journal Article

Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3

by Risch, Felix, Tikhonov, Yuri, Lukyanchuk, Igor, Ionescu, Adrian M., Stolichnov, Igor
Published in Nature communications (24.11.2022)

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Journal Article

Negative capacitance gives a positive boost

Negative capacitance gives a positive boost

by Ionescu, Adrian M.
Published in Nature nanotechnology (2018)

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Journal Article

Electronic devices Nanowire transistors made easy

Electronic devices Nanowire transistors made easy

by Ionescu, Adrian M
Published in Nature nanotechnology (01.03.2010)

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Journal Article

Strange times indeed: the evolving significance of myocardial ischaemia and the dwindling importance of functional imaging

Strange times indeed: the evolving significance of myocardial ischaemia and the dwindling importance of functional imaging

by Ionescu, Adrian
Published in Revista română de cardiologie (31.03.2021)

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Journal Article

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

by Saeidi, Ali, Rosca, Teodor, Memisevic, Elvedin, Stolichnov, Igor, Cavalieri, Matteo, Wernersson, Lars-Erik, Ionescu, Adrian M
Published in Nano letters (13.05.2020)

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Journal Article

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

by Garcia-Cordero, Erick, Bellando, Francesco, Zhang, Junrui, Wildhaber, Fabien, Longo, Johan, Guérin, Hoël, Ionescu, Adrian M
Published in ACS nano (26.12.2018)

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Journal Article

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

by Sheibani, Shokoofeh, Ionescu, Adrian M., Norouzi, Parviz
Published in IEEE sensors journal (15.05.2022)

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Journal Article

Graphene-enhanced ferroelectric domain wall high-output memristor

Graphene-enhanced ferroelectric domain wall high-output memristor

by Risch, Felix, Gilani, Ali, Kamaei, Sadegh, Ionescu, Adrian M., Stolichnov, Igor
Published in Applied physics letters (07.10.2024)

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Journal Article

Near optimal graphene terahertz non-reciprocal isolator

Near optimal graphene terahertz non-reciprocal isolator

by Tamagnone, Michele, Moldovan, Clara, Poumirol, Jean-Marie, Kuzmenko, Alexey B., Ionescu, Adrian M., Mosig, Juan R., Perruisseau-Carrier, Julien
Published in Nature communications (06.04.2016)

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Journal Article

Nanoelectronics: Ferroelectric devices show potential

Nanoelectronics: Ferroelectric devices show potential

by Ionescu, Adrian M
Published in Nature nanotechnology (06.02.2012)

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Journal Article

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

by Sharma, Pankaj, Bernard, Laurent Syavoch, Bazigos, Antonios, Magrez, Arnaud, Ionescu, Adrian M
Published in ACS nano (27.01.2015)

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Journal Article

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

by Gastaldi, Carlotta, Cavalieri, Matteo, Saeidi, Ali, O'Connor, Eamon, Bellando, Francesco, Stolichnov, Igor, Ionescu, Adrian M.
Published in IEEE transactions on electron devices (01.05.2022)

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Journal Article

Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices

Condition for the negative capacitance effect in metal-ferroelectric-insulator-semiconductor devices

by Rusu, Alexandru, Saeidi, Ali, Ionescu, Adrian M
Published in Nanotechnology (18.03.2016)

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Journal Article

Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

by Boucart, Kathy, Ionescu, Adrian Mihai
Published in Solid-state electronics (01.11.2007)

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Journal Article Conference Proceeding

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

by Saeidi, Ali, Jazaeri, Farzan, Stolichnov, Igor, Enz, Christian C., Ionescu, Adrian M.
Published in Scientific reports (24.06.2019)

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Journal Article

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

by De Michielis, L., Lattanzio, L., Ionescu, A. M.
Published in IEEE electron device letters (01.11.2012)

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