Search Results - "INOUE, Naohisa" :: K.UTB vyhledávací portál

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Comparison of finite element models for predicting sound absorption coefficients of infinitely periodical slit resonators

by Yonezawa, Mio, Inoue, Naohisa
Published in Acoustical Science and Technology (2024)

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A basic study on incidence directivity analysis using multipole and local expansions

by Yasuda, Yosuke, Masumoto, Takayuki, Inoue, Naohisa, Sakuma, Tetsuya
Published in Acoustical Science and Technology (01.01.2022)

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Impedance modeling of elastic boundary support in the vibration field of a thin plate

by Inoue, Naohisa, Sakuma, Tetsuya
Published in Acoustical Science and Technology (01.11.2018)

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An experimental study on the influence of incident characteristics on sound insulation between rooms: Study on the incident sound field in the insulation performance measurement for partition walls. Part 2

by Aida, Yu, Inoue, Naohisa, Sakuma, Tetsuya
Published in Japan architectural review (01.10.2022)

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Validation of the Low-Frequency Procedure for Field Measurement of Façade Sound Insulation

by Liu, Jinyu, Inoue, Naohisa, Sakuma, Tetsuya
Published in Buildings (Basel) (01.11.2021)

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Numerical investigation of effect of support conditions of poroelastic materials in impedance tube measurement

by Inoue, Naohisa, Sakuma, Tetsuya
Published in Acoustical Science and Technology (01.01.2017)

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Numerical examination of niche effect on sound transmission loss of glass panes

by Sakuma, Tetsuya, Inoue, Naohisa, Seike, Tsuyoshi
Published in Acoustical Science and Technology (01.01.2017)

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An experimental analysis method for the incident sound field using propagation mode expansion: Study on the incident sound field in the insulation performance measurement for partition walls. part 1

by Aida, Yu, Inoue, Naohisa, Sakuma, Tetsuya
Published in Japan architectural review (01.10.2020)

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A laboratory method for measuring normal-incidence scattering coefficients of architectural surfaces

by Sakuma, Tetsuya, Lee, Hyojin, Inoue, Naohisa
Published in Acoustical Science and Technology (01.01.2016)

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Computational benchmark on sound transmission through an elastic plate: Comparison between frequency-domain and time-domain approaches

by Asakura, Takumi, Seike, Tsuyoshi, Inoue, Naohisa, Sakuma, Tetsuya
Published in Acoustical Science and Technology (01.01.2015)

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Detection of synaptic glutamate release in cerebellar cortex using covalent immobilized enzyme assay and UV-LED excitation system

by Jimbu, Takahito, Inoue, Naohisa, Ohtani, Shingo, Hozumi, Naohiro, Yoshida, Sachiko
Published in Neuroscience research (2009)

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Carbon concentration measurement in silicon down to 10 14 cm ‐3 : second generation IR, SIMS, CPAA and standardization

by Inoue, Naohisa
Published in Physica status solidi. C (01.12.2016)

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Carbon concentration measurement in silicon down to 1014 cm-3: second generation IR, SIMS, CPAA and standardization

by Inoue, Naohisa
Published in Physica status solidi. C (01.12.2016)

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Carbon concentration measurement in silicon down to 10 super(14) cm super(-3): second generation IR, SIMS, CPAA and standardization

by Inoue, Naohisa
Published in Physica status solidi. C (01.12.2016)

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Annealing Effects on Electroluminescence and Laser Operation of InGaAsSbN Quantum Well Diodes grown on InP Substrates

by Kawamura, Yuichi, Nakagawa, Tomokatsu, Inoue, Naohisa
Published in Japanese Journal of Applied Physics (01.10.2004)

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Finite element modeling of acoustic resonators with thermal and viscous boundary layers

by Inoue, Naohisa, Sakuma, Tetsuya
Published in Acoustical Science and Technology (01.09.2018)

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Emission Properties of InGaAsSbN Quantum Well Laser Diodes in 2 µm Wavelength Region Grown on InP Substrates

by Kawamura, Yuichi, Nakagawa, Tomokatsu, Inoue, Naohisa
Published in Japanese Journal of Applied Physics (01.04.2006)

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Lasing Characteristics of InGaAsSbN Quantum Well Laser Diodes at 2-µm-Wavelength Region Grown on InP Substrates

by Kawamura, Yuichi, Nakagawa, Tomokatsu, Inoue, Naohisa
Published in Japanese Journal of Applied Physics (01.08.2005)

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Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method

by Tanahashi, Katsuto, Yamada-Kaneta, Hiroshi, Inoue, Naohisa
Published in Japanese Journal of Applied Physics (01.04.2004)

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Photoreflectance Characterization of Ordered/Disordered GaAs 0.5 Sb 0.5 layers Grown on InP Substrates by Molecular Beam Epitaxy

by Kawamura, Yuichi, Amano, Masanobu, Ouchi, Koichi, Inoue, Naohisa
Published in Japanese Journal of Applied Physics (15.07.2003)

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