Sub-quarter-micron gate fabrication process using phase-shifting mask for microwave GaAs devices
INOKUCHI, K, SAITO, T, JINBO, H, YAMASHITA, Y, SANO, Y
Published in Japanese Journal of Applied Physics (01.12.1991)
Published in Japanese Journal of Applied Physics (01.12.1991)
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Journal Article
Modulation of Drain Current by Holes Generated by Impact Ionization in GaAs MESFET
Fujishiro, Hiroki Inomata, Inokuchi, Kazuyuki, Nishi, Seiji, Sano, Yoshiaki
Published in Japanese Journal of Applied Physics (01.10.1989)
Published in Japanese Journal of Applied Physics (01.10.1989)
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Journal Article
A study of GaAs digital ICs on Si substrates
ONOZAWA, S, KIMURA, T, INOKUCHI, K, SANO, Y, AKIYAMA, M
Published in Japanese Journal of Applied Physics (1993)
Published in Japanese Journal of Applied Physics (1993)
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Conference Proceeding
Journal Article
Effect of bias sputtering on W and W-Al Schottky contact formation and its application to GaAs MESFETs
SEKINO, Y, KIMURA, T, INOKUCHI, K, SANO, Y, SAKUTA, M
Published in Japanese Journal of Applied Physics (01.11.1988)
Published in Japanese Journal of Applied Physics (01.11.1988)
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Journal Article
Asymmetric implantation self-alignment technique for GaAs MESFETs
KIMURA, T, INOKUCHI, K, AKIYAMA, M, SAKUTA, M
Published in Japanese Journal of Applied Physics (01.07.1988)
Published in Japanese Journal of Applied Physics (01.07.1988)
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Journal Article