Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell
Shino, T., Ohsawa, T., Higashi, T., Fujita, K., Kusunoki, N., Minami, Y., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., Nitayama, A.
Published in IEEE transactions on electron devices (01.10.2005)
Published in IEEE transactions on electron devices (01.10.2005)
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Journal Article
Design of a 128-mb SOI DRAM using the floating body cell (FBC)
Ohsawa, T., Fujita, K., Hatsuda, K., Higashi, T., Shino, T., Minami, Y., Nakajima, H., Morikado, M., Inoh, K., Hamamoto, T., Watanabe, S., Fujii, S., Furuyama, T.
Published in IEEE journal of solid-state circuits (01.01.2006)
Published in IEEE journal of solid-state circuits (01.01.2006)
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Journal Article
Conference Proceeding
Analysis on high-frequency characteristics of SOI lateral BJTs with self-aligned external base for 2-GHz RF applications
Shino, T., Yoshitomi, S., Nii, H., Kawanaka, S., Inoh, K., Yamada, T., Fuse, T., Katsumata, Y., Yoshimi, M., Watanabe, S., Matsunaga, J.-I.
Published in IEEE transactions on electron devices (01.03.2002)
Published in IEEE transactions on electron devices (01.03.2002)
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Journal Article
Highly scalable FBC (Floating Body Cell) with 25nm BOX structure for embedded DRAM applications
Shino, T., Higashi, I., Fujita, K., Ohsawa, T., Minami, Y., Yamada, T., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., Nitayama, A.
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
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Conference Proceeding
GM-009 Multicenter study of environmental 5-FU contamination during normal mixing of antineoplastic drugs
Sano, Y, Morita Ogawa, T, Hayashi, Y, Itoi, S, Yokote, N, Inoh, K, Suzuki, Y, Kato, I, Takagi, S, Saito, S
Published in European journal of hospital pharmacy. Science and practice (01.03.2015)
Published in European journal of hospital pharmacy. Science and practice (01.03.2015)
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Journal Article
A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability
Hamamoto, T., Minami, Y., Shino, T., Kusunoki, N., Nakajima, H., Morikado, M., Yamada, T., Inoh, K., Sakamoto, A., Higashi, T., Fujita, K., Hatsuda, K., Ohsawa, T., Nitayama, A.
Published in IEEE transactions on electron devices (01.03.2007)
Published in IEEE transactions on electron devices (01.03.2007)
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Journal Article
A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications
Nii, H, Yamada, T, Inoh, K, Shino, T, Kawanaka, S, Yoshimi, M, Katsumata, Y
Published in IEEE transactions on electron devices (01.07.2000)
Published in IEEE transactions on electron devices (01.07.2000)
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Journal Article
Fully-depleted FBC (floating body cell) with enlarged signal window and excellent logic process compatibility
Shino, T., Higashi, T., Kusunoki, N., Fujita, K., Ohsawa, T., Aoki, N., Tanimoto, H., Minami, Y., Yamada, T., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., Nitayama, A.
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
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Conference Proceeding
A memory using one-transistor gain cell on SOI(FBC) with performance suitable for embedded DRAM's
Ohsawa, T., Higashi, T., Fujita, K., Ikehashi, T., Kajiyama, T., Fukuzumi, Y., Shino, T., Yamada, H., Nakajima, H., Minami, Y., Yamada, T., Inoh, K., Hamamoto, T.
Published in 2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) (2003)
Published in 2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) (2003)
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Conference Proceeding
A novel lateral bipolar transistor with 67 GHz f)max) onthin-film SOI for RF analog applications
Nii, H, Yamada, T, Inoh, K, Shino, T, Kawanaka, S, Yoshimi, M, Katsumata, Y
Published in IEEE transactions on electron devices (01.07.2000)
Published in IEEE transactions on electron devices (01.07.2000)
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Journal Article
A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications
Nii, H., Yamada, T., Inoh, K., Shino, T., Kawanaka, S., Yoshimi, M., Katsumata, Y.
Published in IEEE transactions on electron devices (01.07.2000)
Published in IEEE transactions on electron devices (01.07.2000)
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Journal Article
Oxygen isotope exchange between adsorbed NO and SrTiO3 surfaces
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Conference Proceeding
Journal Article
An 0.3-μm Si epitaxial base BiCMOS technology with 37-GHz f/sub max/ and 10-V BV/sub ceo/ for RF telecommunication
Nii, H., Yoshino, C., Yoshitomi, S., Inoh, K., Furuya, H., Nakajima, H., Sugaya, H., Naruse, H., Katsumata, Y., Iwai, H.
Published in IEEE transactions on electron devices (01.04.1999)
Published in IEEE transactions on electron devices (01.04.1999)
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Journal Article
An 0.3-mu m Si epitaxial base BiCMOS technology with 37-GHzf(max) and 10-V BV(ceo) for RF telecommunication
Nii, H, Yoshino, C, Yoshitomi, S, Inoh, K, Furuya, H, Nakajima, H, Sugaya, H, Naruse, H, Katsumata, Y, Iwai, H
Published in IEEE transactions on electron devices (01.04.1999)
Published in IEEE transactions on electron devices (01.04.1999)
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Journal Article
An 0.3-/spl mu/m Si epitaxial base BiCMOS technology with 37-GHz f/sub max/ and 10-V BV/sub ceo/ for RF telecommunication
Nii, H., Yoshino, C., Yoshitomi, S., Inoh, K., Furuya, H., Nakajima, H., Sugaya, H., Naruse, H., Katsumata, Y., Iwai, H.
Published in IEEE transactions on electron devices (01.04.1999)
Published in IEEE transactions on electron devices (01.04.1999)
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Journal Article
An 18.5ns 128MB SOI DRAM with a floating body cell
Ohsawa, T., Fujita, K., Hatsuda, K., Higashi, T., Morikado, M., Minami, Y., Shino, T., Nakajima, H., Inoh, K., Hamamoto, T., Watanabe, S.
Published in ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005 (2005)
Published in ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005 (2005)
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Conference Proceeding
A Floating Body Cell (FBC) fully Compatible with 90nm CMOS Technology Node for Embedded Applications
Hamamoto, T., Minami, Y., Shino, T., Sakamoto, A., Higashi, T., Kusunoki, N., Fujita, K., Hatsuda, K., Ohsawa, T., Aoki, N., Tanimoto, H., Morikado, M., Nakajima, H., Inoh, K., Nitayama, A.
Published in 2006 IEEE International Conference on IC Design and Technology (2006)
Published in 2006 IEEE International Conference on IC Design and Technology (2006)
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Conference Proceeding
0.3- mu m Si epitaxial base BiCMOS technology with 37-GHz f sub(max) and 10-V BV sub(ceo) for RF telecommunication
Nii, Hideaki, Yoshino, Chihiro, Yoshitomi, Sadayuki, Inoh, Kazumi, Furuya, Hiromi, Nakajima, Hiroomi, Sugaya, Hiroyuki, Naruse, Hiroshi, Katsumata, Yasuhiro, Iwai, Hiroshi
Published in IEEE transactions on electron devices (01.01.1999)
Published in IEEE transactions on electron devices (01.01.1999)
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Journal Article
Ar implantation effects in SOI NMOSFET's under low voltage operation
Shino, T., Nii, H., Kawanaka, S., Inoh, K., Katsumata, Y., Yoshimi, M., Ishiuchi, H.
Published in 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207) (2001)
Published in 2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207) (2001)
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Conference Proceeding