Diffusion and activation of n -type dopants in germanium
Koike, Masahiro, Kamata, Yoshiki, Ino, Tsunehiro, Hagishima, Daisuke, Tatsumura, Kosuke, Koyama, Masato, Nishiyama, Akira
Published in Journal of applied physics (15.07.2008)
Published in Journal of applied physics (15.07.2008)
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Journal Article
Dielectric Constant Behavior of Hf–O–N System
Ino, Tsunehiro, Kamimuta, Yuuichi, Suzuki, Masamichi, Koyama, Masato, Nishiyama, Akira
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
Kamimuta, Yuuichi, Koike, Masahiro, Ino, Tsunehiro, Suzuki, Masamichi, Koyama, Masato, Tsunashima, Yoshitaka, Nishiyama, Akira
Published in Japanese Journal of Applied Physics (01.03.2005)
Published in Japanese Journal of Applied Physics (01.03.2005)
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Journal Article
Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
Koyama, Masato, Kamimuta, Yuuichi, Koike, Masahiro, Ino, Tsunehiro, Nishiyama, Akira
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property
Fujii, Shosuke, Kamimuta, Yuuichi, Ino, Tsunehiro, Nakasaki, Yasushi, Takaishi, Riichiro, Saitoh, Masumi
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
NAKAJIMA YUSUKE, MURAKOSHI ATSUSHI, NOGUCHI MASAKI, TAKASHIMA AKIRA, INO TSUNEHIRO
Year of Publication 09.01.2024
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Year of Publication 09.01.2024
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