Ratioless full-complementary 12-transistor static random access memory for ultra low supply voltage operation
Kondo, Takahiro, Yamamoto, Hiromasa, Hoketsu, Satoko, Imi, Hitoshi, Okamura, Hitoshi, Nakamura, Kazuyuki
Published in Japanese Journal of Applied Physics (01.04.2015)
Published in Japanese Journal of Applied Physics (01.04.2015)
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Journal Article
Vth-shiftable SRAM cell TEGs for direct measurement for the immunity of the threshold voltage variability
Yamaguchi, Shogo, Imi, Hitoshi, Tokumaru, Shogo, Kondo, Takahiro, Yamamoto, Hiromasa, Nakamura, Kazuyuki
Published in 2017 International Conference of Microelectronic Test Structures (ICMTS) (01.03.2017)
Published in 2017 International Conference of Microelectronic Test Structures (ICMTS) (01.03.2017)
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Conference Proceeding