Improving reliability of IGBT surface electrode for 200 °C operation
Nishimura, Tomohiro, Ikeda, Yoshinari, Hokazono, Hiroaki, Mochizuki, Eiji, Takahashi, Yoshikazu
Published in 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) (01.05.2014)
Published in 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) (01.05.2014)
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Conference Proceeding
Semiconductor module
Ikeda, Yoshinari, Nishizawa, Tatsuo, Nakamura, Hideyo, Mochizuki, Eiji, Hori, Motohito
Year of Publication 12.06.2018
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Year of Publication 12.06.2018
Patent
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
KATO RYOICHI, TANIGUCHI KATSUMI, IKEDA YOSHINARI, NAKAGOME AKIHITO, MURATA YUMA
Year of Publication 25.04.2023
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Year of Publication 25.04.2023
Patent
Unit for semiconductor device
Inaba Tetsuya, Ikeda Yoshinari, Yamada Takafumi, Yanagawa Katsuhiko, Takahashi Yoshikazu
Year of Publication 26.12.2017
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Year of Publication 26.12.2017
Patent
Semiconductor device and method for manufacturing the semiconductor device
Nishizawa Tatsuo, Ikeda Yoshinari, Tada Shinji, Mochizuki Eiji, Kinoshita Yoshito
Year of Publication 10.10.2017
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Year of Publication 10.10.2017
Patent
SEMICONDUCTOR MODULE
NAKAMURA Hideyo, IKEDA Yoshinari, HORI Motohito, NISHIZAWA Tatsuo, MOCHIZUKI Eiji
Year of Publication 22.06.2017
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Year of Publication 22.06.2017
Patent
Semiconductor device
Ikeda Yoshinari, Hori Motohito, Gohara Hiromichi, Nishimura Yoshitaka, Takahashi Yoshikazu
Year of Publication 06.06.2017
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Year of Publication 06.06.2017
Patent