Dynamic Behavior of a Medium-Voltage N-Channel SiC-IGBT With Ultrafast Switching Performance of 300 kV/μs
Koseki, Kunio, Yonezawa, Yoshiyuki, Mizushima, Tomonori, Matsunaga, Shinichiro, Iizuka, Yuji, Yamaguchi, Hiroshi
Published in IEEE transactions on industry applications (01.07.2018)
Published in IEEE transactions on industry applications (01.07.2018)
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