SEMICONDUCTOR DEVICE
KARIKI HIRO, NISHIWAKI TATSUYA, IIJIMA RYOSUKE, TAKAO KAZUTO, KURAGUCHI MASAHIKO, SHIMIZU TATSUO, KOBAYASHI YUSUKE, IGUCHI TOMOAKI
Year of Publication 21.05.2024
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Year of Publication 21.05.2024
Patent
Investigation of nitridation and oxidation reactions at SiC/SiO2 interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs
Ohashi, Teruyuki, Nakabayashi, Yukio, Shimizu, Tatsuo, Takao, Kazuto, Iijima, Ryosuke
Published in Japanese Journal of Applied Physics (01.10.2017)
Published in Japanese Journal of Applied Physics (01.10.2017)
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Journal Article
Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
Goryu, Akihiro, Yonezawa, Yoshiyuki, Nishio, Johji, Ota, Chiharu, Kato, Tomohisa, Okada, Aoi, Nakayama, Koji, Okumura, Hajime, Iijima, Ryosuke
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
Improvement of Surge Current Capability in SBD-embedded SiC MOSFETs by Introducing Trigger p-n Diodes
Ohashi, Teruyuki, Kono, Hiroshi, Asaba, Shunsuke, Hayakawa, Hideki, Ogata, Takahiro, Iijima, Ryosuke
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding
Report on the 25th Annual Meeting of the Japanese Association for Developmental and Comparative Immunology (JADCI), August 26 (Monday) to 28 (Wednesday), 2013, the 50th Year Commemorative Building of Okayama University of Science, Okayama 700-0005, Japan (Local Organizer, Nobuhiko Asada)
Asada, Nobuhiko, Iijima, Ryosuke, Kurata, Shoichiro
Published in Developmental and comparative immunology (01.08.2014)
Published in Developmental and comparative immunology (01.08.2014)
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Journal Article
Conference Proceeding
Investigation of nitridation and oxidation reactions at SiC/SiO 2 interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs
Ohashi, Teruyuki, Nakabayashi, Yukio, Shimizu, Tatsuo, Takao, Kazuto, Iijima, Ryosuke
Published in Japanese Journal of Applied Physics (01.10.2017)
Published in Japanese Journal of Applied Physics (01.10.2017)
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Journal Article
Investigation of nitridation and oxidation reactions at SiC/SiO^sub 2^ interfaces in NO annealing and modeling of their quantitative impacts on mobility of SiC MOSFETs
Ohashi, Teruyuki, Nakabayashi, Yukio, Shimizu, Tatsuo, Takao, Kazuto, Iijima, Ryosuke
Published in Japanese Journal of Applied Physics (01.10.2017)
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Published in Japanese Journal of Applied Physics (01.10.2017)
Journal Article
SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
KYOGOKU SHINYA, HARADA SHINSUKE, TANAKA KATSUHISA, IIJIMA RYOSUKE, KIMOTO SHINICHI
Year of Publication 21.01.2022
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Year of Publication 21.01.2022
Patent