Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires
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Published in Nanoscale (28.10.2019)
Published in Nanoscale (28.10.2019)
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MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs
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Published in Journal of crystal growth (01.06.2020)
Published in Journal of crystal growth (01.06.2020)
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Room temperature pulsed operation of nitride nanowire-based multi-quantum shell laser diodes by MOVPE
Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Sone, Naoki, Lu, Weifang, Okuda, Renji, Miyamoto, Yoshiya, Ito, Kazuma, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Published in Applied physics express (01.07.2021)
Published in Applied physics express (01.07.2021)
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Sapphire substrate off-angle and off-direction dependences on characteristics of AlGaN-based deep ultraviolet light-emitting diodes
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Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Structural and optical impacts of AlGaN undershells on coaxial GaInN/GaN multiple-quantum-shells nanowires
Lu, Weifang, Terazawa, Mizuki, Han, Dong-Pyo, Sone, Naoki, Goto, Nanami, Iida, Kazuyoshi, Murakami, Hedeki, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Nanophotonics (Berlin, Germany) (01.01.2020)
Published in Nanophotonics (Berlin, Germany) (01.01.2020)
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High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
Nagamatsu, Kentaro, Okada, Narihito, Sugimura, Hiroki, Tsuzuki, Hirotoshi, Mori, Fumiaki, Iida, Kazuyoshi, Bando, Akira, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Journal of crystal growth (01.04.2008)
Published in Journal of crystal growth (01.04.2008)
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350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN
Iida, Kazuyoshi, Kawashima, Takeshi, Miyazaki, Atsushi, Kasugai, Hideki, Mishima, Syunsuke, Honshio, Akira, Miyake, Yasuto, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Epitaxial lateral overgrowth of AlxGa1-xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices
IIDA, Kazuyoshi, KAWASHIMA, Takeshi, IWAYA, Motoaki, KAMIYAMA, Satoshi, AMANO, Hiroshi, AKASAKI, Isamu, BANDOH, Akira
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
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High-Efficiency Nitride-Based Light-Emitting Diodes with Moth-Eye Structure
Kasugai, Hideki, Miyake, Yasuto, Honshio, Akira, Mishima, Shunsuke, Kawashima, Takeshi, Iida, Kazuyoshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu, Kinoshita, Hiroyuki, Shiomi, Hiromu
Published in Japanese Journal of Applied Physics (01.10.2005)
Published in Japanese Journal of Applied Physics (01.10.2005)
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Controlled synthesis of nonpolar GaInN/GaN multiple-quantum-shells on GaN nanowires by metal-organic chemical vapour deposition
Lu, Weifang, Goto, Nanami, Murakami, Hedeki, Sone, Naoki, Iida, Kazuyoshi, Terazawa, Mizuki, Han, Dong-Pyo, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied surface science (15.04.2020)
Published in Applied surface science (15.04.2020)
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Crystal Growth and Characterization of n‑GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction
Miyamoto, Yoshiya, Lu, Weifang, Sone, Naoki, Okuda, Renji, Ito, Kazuma, Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in ACS applied materials & interfaces (11.08.2021)
Published in ACS applied materials & interfaces (11.08.2021)
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MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells
Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Sone, Naoki, Lu, Weifang, Okuda, Renji, Miyamoto, Yoshiya, Ito, Kazuma, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Published in Journal of crystal growth (15.01.2022)
Published in Journal of crystal growth (15.01.2022)
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Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions
Okuno, Koji, Mizutani, Koichi, Iida, Kazuyoshi, Ohya, Masaki, Sone, Naoki, Lu, Weifang, Okuda, Renji, Miyamoto, Yoshiya, Ito, Kazuma, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Published in physica status solidi (b) (01.06.2022)
Published in physica status solidi (b) (01.06.2022)
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Mechanism and enhancement of anti-parasitic-reaction catalytic activity of tungsten-carbide-coated graphite components for the growth of bulk GaN crystals
Nakamura, Daisuke, Iida, Kazuyoshi, Horibuchi, Kayo, Aoki, Yuko, Takahashi, Naoko, Mori, Yuto, Moriyama, Miki, Nitta, Shugo, Amano, Hiroshi
Published in Applied physics express (01.04.2022)
Published in Applied physics express (01.04.2022)
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Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition
Sone, Naoki, Suzuki, Atsushi, Murakami, Hideki, Goto, Nanami, Terazawa, Mizuki, Lu, Weifang, Han, Dong-Pyo, Iida, Kazuyoshi, Ohya, Masaki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction
Murakami, Hideki, Suzuki, Atsushi, Nokimura, Kyohei, Takebayashi, Minoru, Goto, Nanami, Terazawa, Mizuki, Lu, Weifang, Sone, Naoki, Iida, Kazuyoshi, Ohya, Masaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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