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Performance Analysis of a two-stage Ga2O3 Voltage Multiplier
Sircar, Arindam, Saha, Sudipto, Singisetti, Uttam, Yao, Xiu
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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Design of a Low Parasitic Inductance Paralleled Module for 8.56 kV β-Ga2O3 MOSFET
Liu, Wei, Yang, Ge, Yao, Xiu
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits
Zagni, Nicolo, Modica, Lorenzo, Cioni, Marcello, Cappellini, Giacomo, Castagna, Maria Eloisa, Giorgino, Giovanni, Iucolano, Ferdinando, Verzellesi, Giovanni, Chini, Alessandro
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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Design of High Power Converter with Single Low Ron Discrete SiC Device
Chen, Zibo, Chen, Chen, Huang, Qingyun, Huang, Alex Q.
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (07.11.2022)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (07.11.2022)
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Characterization of Near Conduction Band SiC/SiO2 Interface Traps in Commercial 4H-SiC Power MOSFETs
Rao Maddi, Hema Lata, Nayak, Suvendu, Talesara, Vishank, Xu, Yibo, Lu, Wu, Agarwal, Anant K.
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (07.11.2022)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (07.11.2022)
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Sinusoidally-modulated 3MHz-switching GaN stepdown converter for non-resonant 150kHz WPT applications
Sakuraba, Yutaro, Onishi, Souichi, Lee, Yonghwa, Castellazzi, Alberto
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
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D-Mode GaN HEMT with Direct Drive
Heumesser, Vanessa, Lai, Jih-Sheng, Hsieh, Hsin-Che, Hsu, Johnny, Yang, Chih-Yi, Chang, Edward Y., Ko, Hsiu-Kuei, Liu, Wen-Hung, Lin, Yu-Min
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
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Cascode GaN HEMT Gate Driving Analysis
Heumesser, Vanessa, Lai, Jih-Sheng, Hsieh, Hsin-Che, Hsu, Johnny, Yang, Chih-Yi, Chang, Edward Y., Liu, Ching-Yao, Chieng, Wei-Hua, Hsieh, Yueh-Tsung
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
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Comparison between Experimental and FEM Simulation Results of Differential-Mode Noise in SiC MOSFET based Full-Bridge Power Module
Deepankar, Ibuchi, Takaaki, Funaki, Tsuyoshi, Sakai, Hiroto, Miyazaki, Tatsuya, Okawauchi, Yuta
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
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Experimental analysis of mismatch in electro-thermal device parameter within parallel connected SiC MOSFETs: Considerations for multi-chip power module design
Fayyaz, Asad, Li, Ying, Evans, Paul, Watson, Alan, Wheeler, Pat, Gerada, Chris
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
Published in Workshop on Wide Bandgap Power Devices and Applications in Asia (Online) (27.08.2023)
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A 3-D stacked wire bondless silicon carbide power module
Dutta, Atanu, Ang, Simon S.
Published in 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (01.11.2016)
Published in 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (01.11.2016)
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SiC MOSFET structure at the die level with AFM sMIM Mode
Germanicus, Rosine Coq, Chaudhary, Mahima, Niskanen, Kimmo, Larose, Xavier, Chazal, Vanessa, Bascoul, Guillaume
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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A Highly Efficient GaN and SiC Hybrid Active Neutral Point Clamped (ANPC) Inverter for High-Speed Electric Traction Applications
Deshpande, Ankit Vivek, Wang, Shaozhe, Pool-Mazun, Erick I., Garza-Arias, Enrique, Sandoval, Rolando, Gnegy-Davidson, Clint, Byrd, Thomas, Enjeti, Prasad
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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Analysis of inverter architectures in a GaN-IC technology
Datta, Adarsh, Cosnier, Thibault, Morelli, Iacopo, Syshchyk, Olga, Chatterjee, Urmimala, Borga, Matteo, Bakeroot, Benoit, Decoutere, Stefaan
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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Magnetoresistance-based Current Sensor for Wide Bandgap Power Converter Integration Applications
Niakan, Hossein, Omidi, Alireza, Parkhideh, Babak
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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Thermal and Bonding Strength Evaluation of Die Attach Materials for Power Module Packaging
Rahman, Mohammad Dehan, Li, Xiaoling, Mantooth, H. Alan, Song, Xiaoqing
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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A Non-destructive Short Circuit Withstand Time Screening Methodology for Commercially Available SiC Power MOSFET
Bhattacharya, Monikuntala, Jin, Michael, Qian, Jiashu, Shi, Limeng, Houshmand, Shiva, Yu, Hengyu, White, Marvin H., Agarwal, Anant K., Shimbori, Atsushi, Aman, Aditya, Bhardwaj, Nikhil
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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Investigation of the Single-Pulse Avalanche Capability of Commercial 1.2kV SiC MOSFETs With Different Structures
Yue, Ge, Ren, Na, Sheng, Kuang
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
Published in IEEE Workshop on Wide Bandgap Power Devices and Applications (04.11.2024)
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