Reduction of radiated emission from resonance coil in GaN wireless power transmission circuit by using Nd–Fe–N magnetic material
Ide, Toshihide, Imaoka, Nobuyoshi, Oomori, Mikio, Ozaki, Kimihiro, Shimizu, Mitsuaki, Takada, Noriyuki
Published in AIP advances (01.02.2020)
Published in AIP advances (01.02.2020)
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Journal Article
Demonstration of Quasi-AlGaN/GaN HFET Using Ultrathin GaN/AlN Superlattices as a Barrier Layer
Yagi, Shuichi, Xu-Qiang Shen, Kawakami, Yusuke, Ide, Toshihide, Shimizu, Mitsuaki
Published in IEEE electron device letters (01.09.2010)
Published in IEEE electron device letters (01.09.2010)
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Journal Article
Modulation of Strain States in GaN Films by a Thin AlN/GaN Superlattice Interlayer Grown on Si(110) Substrates
Shen, Xu-Qiang, Takahashi, Tokio, Kawashima, Hiroyuki, Ide, Toshihide, Shimizu, Mitsuaki, Okumura, Hajime
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
Study on AlGaN/GaN growth on carbonized Si substrate
Sakamoto, Tatsuya, Wakabayashi, Shigeaki, Takahashi, Tokio, Ide, Toshihide, Shimizu, Mitsuaki, Ubukata, Akinori, Satou, Takayuki, Tabuchi, Toshiya, Takanashi, Yoshifumi
Published in Japanese Journal of Applied Physics (01.04.2014)
Published in Japanese Journal of Applied Physics (01.04.2014)
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Journal Article
Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN High Electron Mobility Transistors
Ide, Toshihide, Shimizu, Mitsuaki, Nakajima, Akira, Inada, Masaki, Yagi, Shuichi, Piao, Guanxi, Yano, Yoshiki, Akutsu, Nakao, Okumura, Hajime, Arai, Kazuo
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
Ammonia-free quasi-atmospheric MOCVD of InN/Al2O3 (0001)
Yamada, Hisashi, Takahashi, Tokio, Gotow, Takahiro, Kumagai, Naoto, Shimizu, Tetsuji, Ide, Toshihide, Maeda, Tatsuro
Published in Journal of crystal growth (01.11.2024)
Published in Journal of crystal growth (01.11.2024)
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Journal Article
Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
Ide, Xu-Qiang Shen, Shimizu, Sung-Hwan Cho, Hara, Shiro, Okumura, Hajime, Sonoda, Saki, Shimizu, Saburo
Published in Japanese Journal of Applied Physics (01.01.2000)
Published in Japanese Journal of Applied Physics (01.01.2000)
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Journal Article
Characterization of InN Grown Directly on Sapphire Substrate Using Plasma‐Enhanced Metal Organic Chemical Vapor Deposition
Gotow, Takahiro, Kumagai, Naoto, Shimizu, Tetsuji, Yamada, Hisashi, Ide, Toshihide, Maeda, Tatsuro
Published in Crystal research and technology (1979) (01.07.2024)
Published in Crystal research and technology (1979) (01.07.2024)
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Journal Article
Polarity control in MBE growth of III-nitrides, and its device application
Okumura, Hajime, Shimizu, Mitsuaki, Qiang Shen, Xu, Ide, Toshihide
Published in Current applied physics (01.08.2002)
Published in Current applied physics (01.08.2002)
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Journal Article