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Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Effect of Millisecond Annealing Temperature of Ni 1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells
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Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Journal Article
Effect of Millisecond Annealing Temperature of Ni1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells
Kim, Jinbum, Park, Taejin, Lee, Seounghoon, Lee, Siyoung, Kim, Chulsung, Hyun, Sangjin, Kim, Yihwan, Hwang, Kihyun, Kim, Hyoungsub
Published in IEEE transactions on electron devices (01.01.2019)
Published in IEEE transactions on electron devices (01.01.2019)
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Electrical characteristics of SiO 2 /ZrO 2 hybrid tunnel barrier for charge trap flash memory
Choi, Jaeho, Bae, Juhyun, Ahn, Jaeyoung, Hwang, Kihyun, Chung, Ilsub
Published in Japanese Journal of Applied Physics (01.08.2017)
Published in Japanese Journal of Applied Physics (01.08.2017)
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Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation
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Published in 2016 IEEE International Electron Devices Meeting (IEDM) (01.12.2016)
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Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
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Lamellar-structured Ni-silicide film formed by eutectic solidification
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Published in Journal of alloys and compounds (15.01.2019)
Published in Journal of alloys and compounds (15.01.2019)
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Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001)
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Published in Microelectronic engineering (15.01.2019)
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HWANG KIHYUN, CHO KEUN HWI, LEE SANGMOON, YU HAEJUN, KIM SEOKHOON, SHIN ILGYOU, KIM DAHYE, KIM JAEMUN, KIM JINBUM, LEE SEUNG HUN, CHOI KYUNGIN
Year of Publication 02.12.2021
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Year of Publication 02.12.2021
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