Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors
Chen, Jone F., Chang, Chun-Po, Liu, Yu Ming, Tsai, Yan-Lin, Hsu, Hao-Tang, Chen, Chih-Yuan, Hwang, Hann-Ping
Published in Japanese Journal of Applied Physics (01.01.2016)
Published in Japanese Journal of Applied Physics (01.01.2016)
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Journal Article
Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region
Tsai, Yen-Lin, Chen, Jone F, Shen, Shang-Feng, Hsu, Hao-Tang, Kao, Chia-Yu, Chang, Kuei-Fen, Hwang, Hann-Ping
Published in Semiconductor science and technology (01.12.2018)
Published in Semiconductor science and technology (01.12.2018)
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Journal Article
Characteristics and reliability of metal-oxide-semiconductor transistors with various depths of plasma-induced Si recess structure
Chen, Jone F., Tsai, Yen-Lin, Chen, Chun-Yen, Hsu, Hao-Tang, Kao, Chia-Yu, Hwang, Hann-Ping
Published in Japanese Journal of Applied Physics (01.04.2018)
Published in Japanese Journal of Applied Physics (01.04.2018)
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Journal Article
A novel erase method for scaled NAND flash memory device
Lin, Chan-Ching, Chang-Liao, Kuei-Shu, Huang, Tzung-Bin, Hwang, Hann-Ping
Published in 2016 5th International Symposium on Next-Generation Electronics (ISNE) (01.05.2016)
Published in 2016 5th International Symposium on Next-Generation Electronics (ISNE) (01.05.2016)
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Conference Proceeding
Journal Article
A novel erase method for scaled NAND flash memory device
Chan-Ching Lin, Kuei-Shu Chang-Liao, Chen-Hao Huang, Yi-Chung Liang, Tzung-Bin Huang, Hann-Ping Hwang
Published in 2015 International Symposium on VLSI Technology, Systems and Applications (01.04.2015)
Published in 2015 International Symposium on VLSI Technology, Systems and Applications (01.04.2015)
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Conference Proceeding
Comparison of electrical and reliability characteristics of different tunnel oxides in SONOS flash memory
Jia-Lin Wu, Hua-Ching Chien, Chien-Wei Liao, Cheng-Yen Wu, Chih-Yuan Lee, Houng-Chi Wei, Shih-Hsien Chen, Hann-Ping Hwang, Saysamone Pittikoun, Travis Cho, Chin-Hsing Kao
Published in 2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06) (2006)
Published in 2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06) (2006)
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Conference Proceeding
Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory
Victor Chao-Wei Kuo, Chih-Ming Chao, Chih-Kai Kang, Li-Wei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Pittikoun, S.
Published in 2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06) (2006)
Published in 2006 IEEE International Workshop on Memory Technology, Design, and Testing (MTDT'06) (2006)
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Conference Proceeding
A New Self-Aligned NAND Type SONOS Flash Memory with High Scaling Abilities, Fast Programming/Erase Speeds and Good Data Retention Performances
Kuo, C.-W., Yang, E.C.-S., Wei-Zhe Wong, Chin-Ming Chao, Chih-Kai Kang, Li-Wei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Pittikoun, S.
Published in 2006 7th Annual Non-Volatile Memory Technology Symposium (01.11.2006)
Published in 2006 7th Annual Non-Volatile Memory Technology Symposium (01.11.2006)
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Conference Proceeding
Memory structrue and operation method thereof
Chen Chun-Cheng, Hwang Hann-Ping, Huang Tzung-Bin, Lin Chan-Ching, Huang Chen-Hao
Year of Publication 04.10.2016
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Year of Publication 04.10.2016
Patent
NON-VOLATILE MEMORY CELL, NAND-TYPE NON-VOLATILE MEMORY, AND METHOD OF MANUFACTURING THE SAME
WANG ZIH-SONG, CHEN CHIH-YUAN, HWANG HANN-PING, YING TZUNG-HUA, FANG YENNG
Year of Publication 23.06.2016
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Year of Publication 23.06.2016
Patent