A 16-kb Antifuse One-Time-Programmable Memory in 5-nm High-K Metal-Gate FinFET CMOS Featuring Bootstrap High-Voltage Scheme, Read Endpoint Detection, and Pseudodifferential Sensing
Chou, Shao-Yu Shaun, Chen, Shawn, Chang, Jun-Hao, Cheng, Wan-Hsueh, Chih, Yu-Der, Fan, Philex, Huang, Chia-En, Hung, Cher-Ming, Li, Gu-Huan, Wang, Yih, Wu, Shao-Ding, Chang, Tsung-Yung Jonathan
Published in IEEE solid-state circuits letters (2021)
Published in IEEE solid-state circuits letters (2021)
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