What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
Robin, Y., Pristovsek, M., Amano, H., Oehler, F., Oliver, R. A., Humphreys, C. J.
Published in Journal of applied physics (14.11.2018)
Published in Journal of applied physics (14.11.2018)
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Journal Article
Critical thickness calculations for InGaN/GaN
Holec, D., Costa, P.M.F.J., Kappers, M.J., Humphreys, C.J.
Published in Journal of crystal growth (01.05.2007)
Published in Journal of crystal growth (01.05.2007)
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Journal Article
Conference Proceeding
Mg doping affects dislocation core structures in GaN
Rhode, S K, Horton, M K, Kappers, M J, Zhang, S, Humphreys, C J, Dusane, R O, Sahonta, S -L, Moram, M A
Published in Physical review letters (09.07.2013)
Published in Physical review letters (09.07.2013)
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Journal Article
The effect of dislocations on the efficiency of InGaN/GaN solar cells
Zhang, Y., Kappers, M.J., Zhu, D., Oehler, F., Gao, F., Humphreys, C.J.
Published in Solar energy materials and solar cells (01.10.2013)
Published in Solar energy materials and solar cells (01.10.2013)
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Journal Article
Microstructural origins of localization in InGaN quantum wells
Oliver, R A, Bennett, S E, Zhu, T, Beesley, D J, Kappers, M J, Saxey, D W, Cerezo, A, Humphreys, C J
Published in Journal of physics. D, Applied physics (08.09.2010)
Published in Journal of physics. D, Applied physics (08.09.2010)
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Journal Article
Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3
OLIVER, R. A, KAPPERS, M. J, SUMNER, J, DATTA, R, HUMPHREYS, C. J
Published in Journal of crystal growth (01.04.2006)
Published in Journal of crystal growth (01.04.2006)
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Journal Article
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
Oehler, F., Zhu, T., Rhode, S., Kappers, M.J., Humphreys, C.J., Oliver, R.A.
Published in Journal of crystal growth (15.11.2013)
Published in Journal of crystal growth (15.11.2013)
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Journal Article
Photoluminescence studies of cubic GaN epilayers
Church, S. A., Hammersley, S., Mitchell, P. W., Kappers, M. J., Sahonta, S. L., Frentrup, M., Nilsson, D., Ward, P. J., Shaw, L. J., Wallis, D. J., Humphreys, C. J., Oliver, R. A., Binks, D. J., Dawson, P.
Published in physica status solidi (b) (01.08.2017)
Published in physica status solidi (b) (01.08.2017)
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Journal Article
Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique
Spencer, B. F., Smith, W. F., Hibberd, M. T., Dawson, P., Beck, M., Bartels, A., Guiney, I., Humphreys, C. J., Graham, D. M.
Published in Applied physics letters (23.05.2016)
Published in Applied physics letters (23.05.2016)
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Journal Article
Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride
Lozano, J G, Yang, H, Guerrero-Lebrero, M P, D'Alfonso, A J, Yasuhara, A, Okunishi, E, Zhang, S, Humphreys, C J, Allen, L J, Galindo, P L, Hirsch, P B, Nellist, P D
Published in Physical review letters (24.09.2014)
Published in Physical review letters (24.09.2014)
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Journal Article
In-plane imperfections in GaN studied by x-ray diffraction
Vickers, M E, Kappers, M J, Datta, R, McAleese, C, Smeeton, T M, Rayment, F D G, Humphreys, C J
Published in Journal of physics. D, Applied physics (21.05.2005)
Published in Journal of physics. D, Applied physics (21.05.2005)
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Journal Article
Conference Proceeding
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers
KAPPERS, M. J, DATTA, R, OLIVER, R. A, RAYMENT, F. D. G, VICKERS, M. E, HUMPHREYS, C. J
Published in Journal of crystal growth (01.03.2007)
Published in Journal of crystal growth (01.03.2007)
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Conference Proceeding
Journal Article
Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE
Oehler, F., Sutherland, D., Zhu, T., Emery, R., Badcock, T.J., Kappers, M.J., Humphreys, C.J., Dawson, P., Oliver, R.A.
Published in Journal of crystal growth (15.12.2014)
Published in Journal of crystal growth (15.12.2014)
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Journal Article
The dissociation of the [a + c] dislocation in GaN
Hirsch, P.B., Lozano, J.G., Rhode, S., Horton, M.K., Moram, M.A., Zhang, S., Kappers, M.J., Humphreys, C.J., Yasuhara, A., Okunishi, E., Nellist, P.D.
Published in Philosophical magazine (Abingdon, England) (30.09.2013)
Published in Philosophical magazine (Abingdon, England) (30.09.2013)
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Journal Article
Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates
Taylor, E, Fang, F, Oehler, F, Edwards, P R, Kappers, M J, Lorenz, K, Alves, E, McAleese, C, Humphreys, C J, Martin, R W
Published in Semiconductor science and technology (01.06.2013)
Published in Semiconductor science and technology (01.06.2013)
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Journal Article
Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J.
Published in Journal of crystal growth (01.06.2009)
Published in Journal of crystal growth (01.06.2009)
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Journal Article
n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon
Kakanakova-Georgieva, A, Sahonta, S.-L, Nilsson, D, Trinh, X. T, Son, N. T, Janzén, E, Humphreys, C. J
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2016)
Published in Journal of materials chemistry. C, Materials for optical and electronic devices (01.01.2016)
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Journal Article