Determination of implanted layer depth in silicon by electrochemical C-V technique
Hulenyi, L., Kinder, R., Satka, A.
Published in ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) (2000)
Published in ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) (2000)
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Conference Proceeding
The influence of the electrolyte-semiconductor interface on the doping profile measurement of a GaAs structure
Kinder, R., Paszkiewicz, B., Sciana, B., Huleny, L.
Published in ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) (2000)
Published in ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) (2000)
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Conference Proceeding
The negative role of the fast electrons in the microwave oxidation of silicon
Bárdoš, L., Musil, J., Žáček, F., Hulényi, L.
Published in Czechoslovak journal of physics (01.01.1978)
Published in Czechoslovak journal of physics (01.01.1978)
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Journal Article
Measurement and determination of the carrier concentration profile of semiconductor layers by PCIV method
Hulenyi, L., Kinder, R., Kuruc, M.
Published in The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004 (2004)
Published in The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004 (2004)
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Conference Proceeding