Power Electronic Devices in the Future
Hudgins, Jerry L.
Published in IEEE journal of emerging and selected topics in power electronics (01.03.2013)
Published in IEEE journal of emerging and selected topics in power electronics (01.03.2013)
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Journal Article
Bearing Fault Diagnosis of Direct-Drive Wind Turbines Using Multiscale Filtering Spectrum
Jun Wang, Yayu Peng, Wei Qiao, Hudgins, Jerry L.
Published in IEEE transactions on industry applications (01.05.2017)
Published in IEEE transactions on industry applications (01.05.2017)
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Journal Article
A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices
Perez, Sonia, Kotecha, Ramchandra M., Rashid, Arman Ur, Hossain, Md Maksudul, Vrotsos, Tom, Francis, Anthony Matthew, Mantooth, Homer Alan, Santi, Enrico, Hudgins, Jerry L.
Published in IEEE transactions on power electronics (01.09.2019)
Published in IEEE transactions on power electronics (01.09.2019)
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Journal Article
Femtosecond-laser sharp shaping of millimeter-scale geometries with vertical sidewalls
Zhu, Qiuchi, Fan, Peixun, Li, Nan, Carlson, Timothy, Cui, Bai, Silvain, Jean-François, Hudgins, Jerry L, Lu, Yong Feng
Published in International Journal of Extreme Manufacturing (01.10.2021)
Published in International Journal of Extreme Manufacturing (01.10.2021)
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Journal Article
Transient Electrothermal Simulation of Power Semiconductor Devices
Bin Du, Hudgins, J.L., Santi, E., Bryant, A.T., Palmer, P.R., Mantooth, H.A.
Published in IEEE transactions on power electronics (01.01.2010)
Published in IEEE transactions on power electronics (01.01.2010)
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Journal Article
An assessment of wide bandgap semiconductors for power devices
Hudgins, J.L., Simin, G.S., Santi, E., Khan, M.A.
Published in IEEE transactions on power electronics (01.05.2003)
Published in IEEE transactions on power electronics (01.05.2003)
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Journal Article
Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects
Liqing Lu, Bryant, A, Hudgins, J L, Palmer, P R, Santi, E
Published in IEEE transactions on industry applications (01.11.2010)
Published in IEEE transactions on industry applications (01.11.2010)
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Journal Article
A Physics-Based Model for a SiC JFET Accounting for Electric-Field-Dependent Mobility
Platania, E, Zhiyang Chen, Chimento, Filippo, Grekov, Alexander E, Ruiyun Fu, Liqing Lu, Raciti, Angelo, Hudgins, Jerry L, Mantooth, H A, Sheridan, D C, Casady, J, Santi, Enrico
Published in IEEE transactions on industry applications (01.01.2011)
Published in IEEE transactions on industry applications (01.01.2011)
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Journal Article
Modeling, Simulation, and Validation of a Power SiC BJT
Gachovska, T., Hudgins, J. L., Bryant, A., Santi, E., Mantooth, H. A., Agarwal, A. K.
Published in IEEE transactions on power electronics (01.10.2012)
Published in IEEE transactions on power electronics (01.10.2012)
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Journal Article
Circuit simulator models for the diode and IGBT with full temperature dependent features
Palmer, P.R., Santi, E., Hudgins, J.L., Xiaosong Kang, Joyce, J.C., Poh Yoon Eng
Published in IEEE transactions on power electronics (01.09.2003)
Published in IEEE transactions on power electronics (01.09.2003)
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Journal Article
Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model
Bryant, A.T., Liqing Lu, Santi, E., Palmer, P.R., Hudgins, J.L.
Published in IEEE transactions on power electronics (01.01.2008)
Published in IEEE transactions on power electronics (01.01.2008)
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Journal Article
Parameter Extraction Procedure for Vertical SiC Power JFET
Grekov, A. E., Zhiyang Chen, Ruiyun Fu, Hudgins, J. L., Mantooth, H. A., Sheridan, D. C., Casady, J., Santi, E.
Published in IEEE transactions on industry applications (01.07.2011)
Published in IEEE transactions on industry applications (01.07.2011)
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Journal Article
Model for Power SiC Vertical JFET With Unified Description of Linear and Saturation Operating Regimes
Chen, Zhiyang, Grekov, Alexander E., Fu, Ruiyun, Hudgins, Jerry L., Mantooth, H. Alan, Sheridan, David C., Casady, Jeff, Santi, Enrico
Published in IEEE transactions on industry applications (01.07.2011)
Published in IEEE transactions on industry applications (01.07.2011)
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Journal Article
Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs
Liqing Lu, Zhiyang Chen, Bryant, A., Hudgins, J.L., Palmer, P.R., Santi, E.
Published in IEEE transactions on industry applications (01.03.2010)
Published in IEEE transactions on industry applications (01.03.2010)
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Journal Article
Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part II: Parameter Extraction
Liqing Lu, Bryant, A.T., Santi, E., Palmer, P.R., Hudgins, J.L.
Published in IEEE transactions on power electronics (01.01.2008)
Published in IEEE transactions on power electronics (01.01.2008)
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Journal Article
Oxide Failures in SiC Power MOSFETs
Wehri, Zachary, Godbold, Van, Schlegel, Mikayla, Hudgins, Jerry L.
Published in 2023 IEEE Energy Conversion Congress and Exposition (ECCE) (29.10.2023)
Published in 2023 IEEE Energy Conversion Congress and Exposition (ECCE) (29.10.2023)
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