Carrier Transport in High-Mobility III-V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications
Dewey, G., Hudait, M.K., Kangho Lee, Pillarisetty, R., Rachmady, W., Radosavljevic, M., Rakshit, T., Chau, R.
Published in IEEE electron device letters (01.10.2008)
Published in IEEE electron device letters (01.10.2008)
Get full text
Journal Article
Ultrahigh-Speed 0.5 V Supply Voltage \hbox \hbox\hbox Quantum-Well Transistors on Silicon Substrate
Datta, S., Dewey, G., Fastenau, J.M., Hudait, M.K., Loubychev, D., Liu, W.K., Radosavljevic, M., Rachmady, W., Chau, R.
Published in IEEE electron device letters (01.08.2007)
Published in IEEE electron device letters (01.08.2007)
Get full text
Journal Article
Si incorporation and Burstein–Moss shift in n-type GaAs
Hudait, M.K, Modak, P, Krupanidhi, S.B
Published in Materials science & engineering. B, Solid-state materials for advanced technology (31.05.1999)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (31.05.1999)
Get full text
Journal Article
Adaptive Design of Tensile Strained Ge-on-InGaAs QW Laser for MIR Applications
Rainhart, Rebecca, Bavishi, Purv, Westcott, Ben, He, Zibing, Joshi, Rutwik, Hudait, M.K.
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
Published in 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (03.03.2024)
Get full text
Conference Proceeding
Ultrahigh-Speed 0.5 V Supply Voltage In0.7 Ga0.3As Quantum-Well Transistors on Silicon Substrate
Datta, S, Dewey, G, Fastenau, J.M, Hudait, M.K, Loubychev, D, Liu, W.K, Radosavljevic, M, Rachmady, W, Chau, R
Published in IEEE electron device letters (01.08.2007)
Published in IEEE electron device letters (01.08.2007)
Get full text
Journal Article
High-performance In0.53Ga0.47As thermophotovoltaic devices grown by solid source molecular beam epitaxy
Hudait, M.K, Andre, C.L, Kwon, O, Palmisiano, M.N, Ringel, S.A
Published in IEEE electron device letters (01.12.2002)
Published in IEEE electron device letters (01.12.2002)
Get full text
Journal Article
Heterogeneous integration of enhancement mode in0.7ga0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications
Hudait, M.K., Dewey, G., Datta, S., Fastenau, J.M., Kavalieros, J., Liu, W.K., Lubyshev, D., Pillarisetty, R., Rachmady, W., Radosavljevic, M., Rakshit, T., Chau, R.
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
Published in 2007 IEEE International Electron Devices Meeting (01.12.2007)
Get full text
Conference Proceeding