Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors
Singh, Shivendra Kumar, Chen, Bang-Ren, Huang, Zhen-Hong, Wu, Tian-Li, Chauhan, Yogesh Singh
Published in IEEE transactions on electron devices (01.01.2024)
Published in IEEE transactions on electron devices (01.01.2024)
Get full text
Journal Article
Toward Understanding the Failure Mechanism in p-GaN Gate HEMTs Operating in Reverse Conduction Diode Mode
Lin, Wei-Syuan, Bakeroot, Benoit, Huang, Zhen-Hong, Lo, Ting-Chun, Borga, Matteo, Wellekens, Dirk, Posthuma, Niels, Decoutere, Stefaan, Wu, Tian-Li
Published in IEEE transactions on electron devices (01.08.2024)
Published in IEEE transactions on electron devices (01.08.2024)
Get full text
Journal Article
Capacitance-Dependent VTH Instability Under a High dVg/dt Event in p-GaN Power HEMTs
Tang, Shun-Wei, Lin, Wei-Syuan, Huang, Zhen-Hong, Wu, Tian-Li
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
Get full text
Journal Article
Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs
Tang, Shun-Wei, Bakeroot, Benoit, Huang, Zhen-Hong, Chen, Szu-Chia, Lin, Wei-Syuan, Lo, Ting-Chun, Borga, Matteo, Wellekens, Dirk, Posthuma, Niels, Decoutere, Stefaan, Wu, Tian-Li
Published in IEEE transactions on electron devices (01.02.2023)
Published in IEEE transactions on electron devices (01.02.2023)
Get full text
Journal Article
High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability
Tang, Shun-Wei, Huang, Zhen-Hong, Chen, Szu-Chia, Lin, Wei-Syuan, de Jaeger, Brice, Wellekens, Dirk, Borga, Matteo, Bakeroot, Benoit, Decoutere, Stefaan, Wu, Tian-Li
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
Get full text
Journal Article
Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations
Huang, Zhen-Hong, Tang, Shun-Wei, Fan, Chao-Ta, Lin, Ming-Cheng, Wu, Tian-Li
Published in Microelectronics and reliability (01.06.2023)
Published in Microelectronics and reliability (01.06.2023)
Get full text
Journal Article
Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)
Huang, Zhen-Hong, Yang, Tsung-Ying, Wu, Jui-Sheng, Liang, Yan-Kui, Hsu, Jen-Fu, Lin, Wei-Cheng, Wu, Tian-Li, Chang, Edward Yi
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
Get full text
Journal Article
Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures
Lin, Wei-Cheng, Yu, Wei-Chen, Chen, Bang-Ren, Hsiao, Yu-Sheng, Huang, Zhen-Hong, Hung, Chia-Lung, Hsiao, Yi-Kai, Yeh, Nai-Jen, Kuo, Hao-Chung, Tu, Chang-Ching, Wu, Tian-Li
Published in Microelectronics and reliability (01.11.2023)
Published in Microelectronics and reliability (01.11.2023)
Get full text
Journal Article
Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteries
Cai, Yi, Huang, Shao-Zhuan, She, Fa-Shuang, Liu, Jing, Zhang, Run-Lin, Huang, Zhen-Hong, Wang, Feng-Yun, Wang, Hong-En
Published in RSC advances (01.01.2016)
Published in RSC advances (01.01.2016)
Get full text
Journal Article
Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process
Tang, Shun-Wei, Huang, Zhen-Hong, Chen, Yi-Cheng, Wu, Cheng-Hung, Lin, Pin-Hau, Chen, Zheng-Chen, Lu, Ming-Hao, Kao, Kuo-Hsing, Wu, Tian-Li
Published in Microelectronics and reliability (01.07.2021)
Published in Microelectronics and reliability (01.07.2021)
Get full text
Journal Article
A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs
Hsiao, Yu-Sheng, Yu, Wei-Chen, Sung, Cheng, Lin, Wei-Cheng, Hsiao, Yi-Kai, Hung, Chia-Lung, Huang, Zhen-Hong, Kuo, Hao-Chung, Tu, Chang-Ching, Wu, Tian-Li
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Get full text
Conference Proceeding
200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability
Huang, Zhen-Hong, Chang, Chia-Hao, Lo, Ting-Chun, Lee, Yu-Ting, Lu, Chih-Hung, Wang, Hung-En, Tsai, Yi-He, Cheng, Ying-Chi, Huang, Yu-Jen, Chou, Chin-Wen, Wu, Tian-Li
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Get full text
Conference Proceeding
Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs
Huang, Zhen-Hong, Lin, Wei-Syuan, Lo, Ting-Chun, Tang, Shun-Wei, Chen, Szu-Chia, Wellekens, Dirk, Borga, Matteo, Posthuma, Niels, Bakeroot, Benoit, Decoutere, Stefaan, Wu, Tian-Li
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Get full text
Conference Proceeding
Effects of N2 Pretreatment on Performance and Stabilities of Power p-GaN HEMTs
Huang, Zhen-Hong, Chang, Chia-Hao, Lin, Wei-Syuan, Lo, Ting-Chun, Ching, Ying-Chi, Huang, Yu-Jen, Hwang, Robin Christine, Chou, Chin-Wen, Wu, Tian-Li
Published in 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (24.07.2023)
Published in 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) (24.07.2023)
Get full text
Conference Proceeding
Capacitance-Dependent V TH Instability Under a High dV g /dt Event in p-GaN Power HEMTs
Tang, Shun-Wei, Lin, Wei-Syuan, Huang, Zhen-Hong, Wu, Tian-Li
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
Get full text
Journal Article
Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
Gallardo, Jethro Oroceo, Dash, Sachidananda, Tran, Thanh Nga, Huang, Zhen-Hong, Tang, Shun-Wei, Wellekens, Dirk, Bakeroot, Benoit, Syshchyk, Olga, De Jaeger, Brice, Decoutere, Stefaan, Wu, Tian-Li
Published in Microelectronics and reliability (01.07.2022)
Published in Microelectronics and reliability (01.07.2022)
Get full text
Journal Article
Facile synthesis of well-shaped spinel LiNi 0.5 Mn 1.5 O 4 nanoparticles as cathode materials for lithium ion batteries
Cai, Yi, Huang, Shao-Zhuan, She, Fa-Shuang, Liu, Jing, Zhang, Run-Lin, Huang, Zhen-Hong, Wang, Feng-Yun, Wang, Hong-En
Published in RSC advances (2016)
Published in RSC advances (2016)
Get full text
Journal Article
Facile synthesis of well-shaped spinel LiNi0.5Mn1.5O4 nanoparticles as cathode materials for lithium ion batteriesElectronic supplementary information (ESI) available. See DOI: 10.1039/c5ra21723g
Cai, Yi, Huang, Shao-Zhuan, She, Fa-Shuang, Liu, Jing, Zhang, Run-Lin, Huang, Zhen-Hong, Wang, Feng-Yun, Wang, Hong-En
Year of Publication 04.01.2016
Year of Publication 04.01.2016
Get full text
Journal Article
Prognostic Analysis of 102 Patients with Synchronous Colorectal Cancer and Liver Metastases Treated with Simultaneous Resection
Zhang, Ye-Fan, Mao, Rui, Chen, Xiao, Zhao, Jian-Jun, Bi, Xin-Yu, Li, Zhi-Yu, Zhou, Jian-Guo, Zhao, Hong, Huang, Zhen, Sun, Yong-Kun, Cai, Jian-Qiang
Published in Chinese medical journal (05.06.2017)
Published in Chinese medical journal (05.06.2017)
Get full text
Journal Article