Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors
Chuang, Hsun-Jen, Chamlagain, Bhim, Koehler, Michael, Perera, Meeghage Madusanka, Yan, Jiaqiang, Mandrus, David, Tománek, David, Zhou, Zhixian
Published in Nano letters (09.03.2016)
Published in Nano letters (09.03.2016)
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Journal Article
Twist Angle-Dependent Atomic Reconstruction and Moiré Patterns in Transition Metal Dichalcogenide Heterostructures
Rosenberger, Matthew R, Chuang, Hsun-Jen, Phillips, Madeleine, Oleshko, Vladimir P, McCreary, Kathleen M, Sivaram, Saujan V, Hellberg, C. Stephen, Jonker, Berend T
Published in ACS nano (28.04.2020)
Published in ACS nano (28.04.2020)
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Journal Article
Polarized photocurrent response in black phosphorus field-effect transistors
Hong, Tu, Chamlagain, Bhim, Lin, Wenzhi, Chuang, Hsun-Jen, Pan, Minghu, Zhou, Zhixian, Xu, Ya-Qiong
Published in Nanoscale (07.08.2014)
Published in Nanoscale (07.08.2014)
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Journal Article
Double Indirect Interlayer Exciton in a MoSe2/WSe2 van der Waals Heterostructure
Hanbicki, Aubrey T, Chuang, Hsun-Jen, Rosenberger, Matthew R, Hellberg, C. Stephen, Sivaram, Saujan V, McCreary, Kathleen M, Mazin, Igor I, Jonker, Berend T
Published in ACS nano (22.05.2018)
Published in ACS nano (22.05.2018)
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Journal Article
Continuous Wave Sum Frequency Generation and Imaging of Monolayer and Heterobilayer Two-Dimensional Semiconductors
Yao, Kaiyuan, Yanev, Emanuil, Chuang, Hsun-Jen, Rosenberger, Matthew R, Xu, Xinyi, Darlington, Thomas, McCreary, Kathleen M, Hanbicki, Aubrey T, Watanabe, Kenji, Taniguchi, Takashi, Jonker, Berend T, Zhu, Xiaoyang, Basov, D. N, Hone, James C, Schuck, P. James
Published in ACS nano (28.01.2020)
Published in ACS nano (28.01.2020)
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Journal Article
Chemical Identification of Interlayer Contaminants within van der Waals Heterostructures
Schwartz, Jeffrey J, Chuang, Hsun-Jen, Rosenberger, Matthew R, Sivaram, Saujan V, McCreary, Kathleen M, Jonker, Berend T, Centrone, Andrea
Published in ACS applied materials & interfaces (17.07.2019)
Published in ACS applied materials & interfaces (17.07.2019)
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Journal Article
Edge Effects on the pH Response of Graphene Nanoribbon Field Effect Transistors
Tan, Xuebin, Chuang, Hsun-Jen, Lin, Ming-Wei, Zhou, Zhixian, Cheng, Mark Ming-Cheng
Published in Journal of physical chemistry. C (27.12.2013)
Published in Journal of physical chemistry. C (27.12.2013)
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Journal Article
Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal–Insulator Electronics
Cui, Qingsong, Sakhdari, Maryam, Chamlagain, Bhim, Chuang, Hsun-Jen, Liu, Yi, Cheng, Mark Ming-Cheng, Zhou, Zhixian, Chen, Pai-Yen
Published in ACS applied materials & interfaces (21.12.2016)
Published in ACS applied materials & interfaces (21.12.2016)
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Journal Article
Control of the Schottky barrier height in monolayer WS2 FETs using molecular doping
Zhang, Siyuan, Chuang, Hsun- Jen, Le, Son T., Richter, Curt A., McCreary, Kathleen M., Jonker, Berend T., Hight Walker, Angela R., Hacker, Christina A.
Published in AIP advances (01.08.2022)
Published in AIP advances (01.08.2022)
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Journal Article
Anisotropic photocurrent response at black phosphorus-MoS2 p-n heterojunctions
Hong, Tu, Chamlagain, Bhim, Wang, Tianjiao, Chuang, Hsun-Jen, Zhou, Zhixian, Xu, Ya-Qiong
Published in Nanoscale (28.11.2015)
Published in Nanoscale (28.11.2015)
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Journal Article
Quantum Calligraphy: Writing Single-Photon Emitters in a Two-Dimensional Materials Platform
Rosenberger, Matthew R, Dass, Chandriker Kavir, Chuang, Hsun-Jen, Sivaram, Saujan V, McCreary, Kathleen M, Hendrickson, Joshua R, Jonker, Berend T
Published in ACS nano (22.01.2019)
Published in ACS nano (22.01.2019)
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Journal Article
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating
Perera, Meeghage Madusanka, Lin, Ming-Wei, Chuang, Hsun-Jen, Chamlagain, Bhim Prasad, Wang, Chongyu, Tan, Xuebin, Cheng, Mark Ming-Cheng, Tománek, David, Zhou, Zhixian
Published in ACS nano (28.05.2013)
Published in ACS nano (28.05.2013)
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Journal Article
High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
Chuang, Hsun-Jen, Tan, Xuebin, Ghimire, Nirmal Jeevi, Perera, Meeghage Madusanka, Chamlagain, Bhim, Cheng, Mark Ming-Cheng, Yan, Jiaqiang, Mandrus, David, Tománek, David, Zhou, Zhixian
Published in Nano letters (11.06.2014)
Published in Nano letters (11.06.2014)
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Journal Article
Mobility Improvement and Temperature Dependence in MoSe 2 Field-Effect Transistors on Parylene-C Substrate
Chamlagain, Bhim, Li, Qing, Ghimire, Nirmal Jeevi, Chuang, Hsun-Jen, Perera, Meeghage Madusanka, Tu, Honggen, Xu, Yong, Pan, Minghu, Xaio, Di, Yan, Jiaqiang, Mandrus, David, Zhou, Zhixian
Published in ACS nano (27.05.2014)
Published in ACS nano (27.05.2014)
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Journal Article
Highly Efficient Spin–Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures
Lohmann, Mark, Wickramaratne, Darshana, Moon, Jisoo, Noyan, Mehmet, Chuang, Hsun-Jen, Jonker, Berend T., Li, Connie H.
Published in ACS nano (09.01.2024)
Published in ACS nano (09.01.2024)
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Journal Article
Stacking-dependent optical properties in bilayer WSe2
McCreary, Kathleen M, Phillips, Madeleine, Chuang, Hsun-Jen, Wickramaratne, Darshana, Rosenberger, Matthew, Hellberg, C Stephen, Jonker, Berend T
Published in Nanoscale (23.12.2021)
Published in Nanoscale (23.12.2021)
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