A novel stack structure to improve the degradation of W-polycide gated MOS device with undoped a-Si/heavily-doped poly-Si multilayer
Lee, Kan-Yuan, Fang, Yean-Kuen, Chen, Chii-Wen, Liang, Mong-Song, Hsieh, Jang-Cheng
Published in IEEE electron device letters (01.05.1997)
Published in IEEE electron device letters (01.05.1997)
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Journal Article
Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide
Huang, Kuo-Ching, Fang, Yean-Kuen, Yaung, Dun-Nian, Hsieh, Jang-Cheng, Liang, Mong-Song
Published in Japanese Journal of Applied Physics (01.10.1999)
Published in Japanese Journal of Applied Physics (01.10.1999)
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Journal Article
Improvement on fluorine effect under high field stress in tungsten-polycide gated metal-oxide-semiconductor field-effect transistor with oxynitride and/or reoxidized-oxynitride gate dielectric
CHEN, C.-W, FANG, Y.-K, LEE, K.-Y, HSIEH, J.-C, LIANG, M.-S
Published in Japanese Journal of Applied Physics (1996)
Published in Japanese Journal of Applied Physics (1996)
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Journal Article
Anomalous current-voltage characteristics and threshold voltage shift in implanted-polysilicon-gated complementary metal-oxide-semiconductor field-effect transistors with/without titanium-polycide technology
Chen, Chii-Wen, Fang, Yean-Kuen, Lee, Gun-Yuan, Hsieh, Jang-Cheng, Liang, Mong-Song, Lin, Mou-Shiung, Yoo, Chue-San
Published in Japanese Journal of Applied Physics (01.08.1995)
Published in Japanese Journal of Applied Physics (01.08.1995)
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Journal Article
Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors
Huang, Kuo-Ching, Fang, Yean-Kuen, Yaung, Dun-Nian, Chen, Chii-Wen, Liang, Mong-Song, Hsieh, Jang-Cheng, Su, Chi-Wen, Lee, Kuei-Ying
Published in IEEE electron device letters (01.01.1999)
Published in IEEE electron device letters (01.01.1999)
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Journal Article
Narrow Width and Length Dependence of SiGe and Sallow-Trench-Isolation Stress Induced Defects in 45 nm p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Strained SiGe Source/Drain
Cheng, Chung-Yun, Fang, Yean-Kuen, Hsieh, Jang-Cheng, Sheu, Yi-Ming, Hsia, Harry, Chen, Wei-Ming, Lin, Shyue-Shyh, Hou, Chin-Shan
Published in Japanese Journal of Applied Physics (01.04.2009)
Published in Japanese Journal of Applied Physics (01.04.2009)
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Journal Article
Image sensor package and fabrication method thereof
Weng, Jui-Ping, Hsieh, Jang-Cheng, Lin, Tzu-Han, Zung, Pai-Chun Peter
Year of Publication 01.03.2011
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Year of Publication 01.03.2011
Patent
Image sensor package and fabrication method thereof
Weng, Jui-Ping, Hsieh, Jang-Cheng, Lin, Tzu-Han, Zung, Pai-Chun Peter
Year of Publication 29.09.2009
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Year of Publication 29.09.2009
Patent