High-Density Multiple Bits-per-Cell 1T4R RRAM Array with Gradual SET/RESET and its Effectiveness for Deep Learning
Hsieh, E.R., Zheng, X., Nelson, M., Le, B.Q., Wong, H.-S.P., Mitra, S., Wong, S., Giordano, M., Hodson, B., Levy, A., Osekowsky, S.K., Radway, R.M., Shih, Y.C., Wan, W., Wu, T. F.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Get full text
Conference Proceeding
A new observation of strain-induced slow traps in advanced CMOS technology with process-induced strain using random telegraph noise measurement
Lin, M.H., Hsieh, E.R., Chung, S.S., Tsai, C.H., Liu, P.W., Lin, Y.H., Tsai, C.T., Ma, G.H.
Published in 2009 Symposium on VLSI Technology (01.06.2009)
Get full text
Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
Design of high-performance and highly reliable nMOSFETs with embedded Si:C S/D extension stressor(Si:C S/D-E)
Chung, S.S., Hsieh, E.R., Liu, P.W., Chiang, W.T., Tsai, S.H., Tsai, T.L., Huang, R.M., Tsai, C.H., Teng, W.Y., Li, C.I., Kuo, T.F., Wang, Y.R., Yang, C.L., Tsai, C.T., Ma, G.H., Chien, S.C., Sun, S.W.
Published in 2009 Symposium on VLSI Technology (01.06.2009)
Get full text
Published in 2009 Symposium on VLSI Technology (01.06.2009)
Conference Proceeding
More strain and less stress- the guideline for developing high-end strained CMOS technologies with acceptable reliability
Chung, S.S., Hsieh, E.R., Huang, D.C., Lai, C.S., Tsai, C.H., Liu, P.W., Lin, Y.H., Tsai, C.T., Ma, G.H., Chien, S.C., Sun, S.W.
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Published in 2008 IEEE International Electron Devices Meeting (01.12.2008)
Get full text
Conference Proceeding
A new and simple experimental approach to characterizing the carrier transport and reliability of strained CMOS devices in the quasi-ballistic regime
Hsieh, E.R., Chung, S.S., Liu, P.W., Chiang, W.T., Tsai, C.H., Teng, W.Y., Li, C.I., Kuo, T.F., Wang, Y.R., Yang, C.L., Tsai, C.T., Ma, G.H.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Get full text
Conference Proceeding
The Ballistic Transport and Reliability of the SOI and Strained-SOI nMOSFETs with 65nm Node and Beyond Technology
Hsieh, E.R., Chang, D.W., Chung, S.S., Lin, Y.H., Tsai, C.H., Tsai, C.T., Ma, G.H.
Published in 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2008)
Published in 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (01.04.2008)
Get full text
Conference Proceeding
New observation of an abnormal leakage current in advanced CMOS devices with short channel lengths down to 50nm and beyond
Hsieh, E.R., Chung, S.S., Lin, Y.H., Tsai, C.H., Liu, P.W., Tsai, C.T., Ma, G.H., Chien, S.C., Sun, S.W.
Published in 2008 IEEE Silicon Nanoelectronics Workshop (01.06.2008)
Published in 2008 IEEE Silicon Nanoelectronics Workshop (01.06.2008)
Get full text
Conference Proceeding