High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
Yen-Ku Lin, Noda, Shuichi, Chia-Ching Huang, Hsiao-Chieh Lo, Chia-Hsun Wu, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.06.2017)
Published in IEEE electron device letters (01.06.2017)
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Journal Article
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.11.2016)
Published in IEEE electron device letters (01.11.2016)
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Journal Article
Corrections to "AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications" [Nov 16 1395-1398]
Yen-Ku Lin, Noda, Shuichi, Hsiao-Chieh Lo, Shih-Chien Liu, Chia-Hsun Wu, Yuen-Yee Wong, Quang Ho Luc, Po-Chun Chang, Heng-Tung Hsu, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.01.2017)
Published in IEEE electron device letters (01.01.2017)
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Journal Article
High-Performance GaN MOSHEMTs Fabricated With ALD Al 2 O 3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
Lin, Yen-Ku, Noda, Shuichi, Huang, Chia-Ching, Lo, Hsiao-Chieh, Wu, Chia-Hsun, Luc, Quang Ho, Chang, Po-Chun, Hsu, Heng-Tung, Samukawa, Seiji, Chang, Edward Yi
Published in IEEE electron device letters (01.06.2017)
Published in IEEE electron device letters (01.06.2017)
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Journal Article
Broadband antireflection sub-wavelength structure of InGaP InGaAs Ge triple junction solar cell with composition-graded SiNx
Chung, Chen-Chen, Lo, Hsiao-Chieh, Lin, Yen-Ku, Yu, Hung-Wei, Tran, Binh Tinh, Lin, Kung- Liang, Chen, Yung Chang, Quan, Nguyen-Hong, Chang, Edward Yi, Tseng, Yuan-Chieh
Published in Materials research express (27.05.2015)
Published in Materials research express (27.05.2015)
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Journal Article
Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiN x
Chung, Chen-Chen, Lo, Hsiao-Chieh, Lin, Yen-Ku, Yu, Hung-Wei, Tran, Binh Tinh, Lin, Kung- Liang, Chen, Yung Chang, Quan, Nguyen-Hong, Chang, Edward Yi, Tseng, Yuan-Chieh
Published in Materials research express (27.05.2015)
Published in Materials research express (27.05.2015)
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Journal Article
Broadband antireflection sub-wavelength structure of InGaP/InGaAs/Ge triple junction solar cell with composition-graded SiN sub(x)
Chung, Chen-Chen, Lo, Hsiao-Chieh, Lin, Yen-Ku, Yu, Hung-Wei, Tran, Binh Tinh, Lin, Kung-Liang, Chen, Yung Chang, Quan, Nguyen-Hong, Chang, Edward Yi, Tseng, Yuan-Chieh
Published in Materials research express (01.05.2015)
Published in Materials research express (01.05.2015)
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Journal Article