A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric
Huang, Chih-Jen, Liu, Yun-Chang, Wang, Mu-Chun, Caywood, John, Hong, Shi-Fang, Wu, Auter, Hsia, Liang-Chu, Chang, Yi-Jao, Liu, Fu-Tai
Published in Japanese Journal of Applied Physics (2001)
Published in Japanese Journal of Applied Physics (2001)
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