Trap Assisted Tunneling and Its Effect on Subthreshold Swing of Tunnel FETs
Sajjad, Redwan N., Chern, Winston, Hoyt, Judy L., Antoniadis, Dimitri A.
Published in IEEE transactions on electron devices (01.11.2016)
Published in IEEE transactions on electron devices (01.11.2016)
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Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
Agarwal, Sapan, Teherani, James T., Hoyt, Judy L., Antoniadis, Dimitri A., Yablonovitch, Eli
Published in IEEE transactions on electron devices (01.05.2014)
Published in IEEE transactions on electron devices (01.05.2014)
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Photonic ADC: overcoming the bottleneck of electronic jitter
Khilo, Anatol, Spector, Steven J, Grein, Matthew E, Nejadmalayeri, Amir H, Holzwarth, Charles W, Sander, Michelle Y, Dahlem, Marcus S, Peng, Michael Y, Geis, Michael W, DiLello, Nicole A, Yoon, Jung U, Motamedi, Ali, Orcutt, Jason S, Wang, Jade P, Sorace-Agaskar, Cheryl M, Popović, Miloš A, Sun, Jie, Zhou, Gui-Rong, Byun, Hyunil, Chen, Jian, Hoyt, Judy L, Smith, Henry I, Ram, Rajeev J, Perrott, Michael, Lyszczarz, Theodore M, Ippen, Erich P, Kärtner, Franz X
Published in Optics express (13.02.2012)
Published in Optics express (13.02.2012)
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Thin-film Si1−xGex HIT solar cells
Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.
Published in Solar energy (01.05.2014)
Published in Solar energy (01.05.2014)
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In0.53Ga0.47As/GaAs0.5Sb0.5 Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics
TAO YU, TEHERANI, James T, ANTONIADIS, Dimitri A, HOYT, Judy L
Published in IEEE electron device letters (01.12.2013)
Published in IEEE electron device letters (01.12.2013)
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Building Many-Core Processor-to-DRAM Networks with Monolithic CMOS Silicon Photonics
Batten, C., Joshi, A., Orcutt, J., Khilo, A., Moss, B., Holzwarth, C.W., Popovic, M.A., Hanqing Li, Smith, H.I., Hoyt, J.L., Kartner, F.X., Ram, R.J., Stojanovic, V., Asanovic, K.
Published in IEEE MICRO (01.07.2009)
Published in IEEE MICRO (01.07.2009)
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Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors
Teherani, J. T., Agarwal, S., Yablonovitch, E., Hoyt, J. L., Antoniadis, D. A.
Published in IEEE electron device letters (01.02.2013)
Published in IEEE electron device letters (01.02.2013)
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Journal Article
Ultrathin Strained-Ge Channel P-MOSFETs With High- K /Metal Gate and Sub-1-nm Equivalent Oxide Thickness
Hashemi, O., Chern, W., Lee, H., Teherani, J. T., Zhu, Y., Gonsalvez, J., Shahidi, G. G., Hoyt, J. L.
Published in IEEE electron device letters (01.07.2012)
Published in IEEE electron device letters (01.07.2012)
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Detection of Charge Storage on Molecular Thin Films of Tris(8-hydroxyquinoline) Aluminum (Alq3) by Kelvin Force Microscopy: A Candidate System for High Storage Capacity Memory Cells
Paydavosi, Sarah, Aidala, Katherine E, Brown, Patrick R, Hashemi, Pouya, Supran, Geoffrey J, Osedach, Timothy P, Hoyt, Judy L, Bulović, Vladimir
Published in Nano letters (14.03.2012)
Published in Nano letters (14.03.2012)
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Journal Article
Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics
Tao Yu, Teherani, James T., Antoniadis, Dimitri A., Hoyt, Judy L.
Published in IEEE electron device letters (01.12.2013)
Published in IEEE electron device letters (01.12.2013)
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Journal Article
Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells
Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.
Published in AIP advances (01.05.2013)
Published in AIP advances (01.05.2013)
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Journal Article
A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs
Nayfeh, H.M., Hoyt, J.L., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
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