A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs
Nayfeh, H.M., Hoyt, J.L., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
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Journal Article
Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs
Aberg, I., Cait Ni Chleirigh, Hoyt, J.L.
Published in IEEE transactions on electron devices (01.05.2006)
Published in IEEE transactions on electron devices (01.05.2006)
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Journal Article
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
Guangrui Xia, Nayfeh, H.M., Lee, M.L., Fitzgerald, E.A., Antoniadis, D.A., Anjum, D.H., Jian Li, Hull, R., Klymko, N., Hoyt, J.L.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
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Journal Article
Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)
Cheng, Zhiyuan, Jung, Jongwan, Lee, Minjoo L, Pitera, Arthur J, Hoyt, Judy L, Antoniadis, Dimitri A, Fitzgerald, Eugene A
Published in Semiconductor science and technology (01.05.2004)
Published in Semiconductor science and technology (01.05.2004)
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Journal Article
Fabrication of ultra-thin strained silicon on insulator
DRAKE, T. S, CHLEIRIGH, C. Ni, HOYT, J. L, LEE, M. L, PITERA, A. J, FITZGERALD, E. A, ANTONIADIS, D. A, ANJUM, D. H, LI, J, HULL, R, KLYMKO, N
Published in Journal of electronic materials (01.09.2003)
Published in Journal of electronic materials (01.09.2003)
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Journal Article
Mobility enhancement in dual-channel P-MOSFETs
Jongwan Jung, Shaofeng Yu, Lee, M.L., Hoyt, J.L., Fitzgerald, E.A., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.09.2004)
Published in IEEE transactions on electron devices (01.09.2004)
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Journal Article
Strained silicon MOSFET technology
Hoyt, J.L., Nayfeh, H.M., Eguchi, S., Aberg, I., Xia, G., Drake, T., Fitzgerald, E.A., Antoniadis, D.A.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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Conference Proceeding
On the mechanism of ion-implanted As diffusion in relaxed SiGe
Eguchi, S, Lee, J.J, Rhee, S.J, Kwong, D.L, Lee, M.L, Fitzgerald, E.A, Åberg, I, Hoyt, J.L
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
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Journal Article
Conference Proceeding
Abrupt phosphorus profiles in Si: Effects of temperature and substitutional carbon on phosphorus autodoping
SINGH, D. V, HOYT, J. L, GIBBONS, J. F
Published in Journal of the Electrochemical Society (01.09.2003)
Published in Journal of the Electrochemical Society (01.09.2003)
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Journal Article
Relaxed silicon-germanium on insulator substrate by layer transfer
ZHIYUAN CHENG, TARASCHI, Gianni, CURRIE, Matthew T, LEITZ, Chris W, LEE, Minjoo L, PITERA, Arthur, LANGDO, Thomas A, HOYT, Judy L, ANTONIADIS, Dimitri A, FITZGERALD, Eugene A
Published in Journal of electronic materials (01.12.2001)
Published in Journal of electronic materials (01.12.2001)
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Journal Article
Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor deposition
HOYT, J. L, MITCHELL, T. O, RIM, K, SINGH, D. V, GIBBONS, J. F
Published in Thin solid films (26.05.1998)
Published in Thin solid films (26.05.1998)
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Conference Proceeding
Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique
Aberg, I., Olubuyide, O.O., Chleirigh, C.N., Lauer, I., Antoniadis, D.A., Li, J., Hull, R., Hoyt, J.L.
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
Published in Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004 (2004)
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Conference Proceeding