Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs
Gomez, Leonardo, Ni Chlairigh, C., Hashemi, P., Hoyt, J. L.
Published in IEEE electron device letters (01.08.2010)
Published in IEEE electron device letters (01.08.2010)
Get full text
Journal Article
Fabrication of ultra-thin strained silicon on insulator
DRAKE, T. S, CHLEIRIGH, C. Ni, HOYT, J. L, LEE, M. L, PITERA, A. J, FITZGERALD, E. A, ANTONIADIS, D. A, ANJUM, D. H, LI, J, HULL, R, KLYMKO, N
Published in Journal of electronic materials (01.09.2003)
Published in Journal of electronic materials (01.09.2003)
Get full text
Journal Article
On the mechanism of ion-implanted As diffusion in relaxed SiGe
Eguchi, S, Lee, J.J, Rhee, S.J, Kwong, D.L, Lee, M.L, Fitzgerald, E.A, Åberg, I, Hoyt, J.L
Published in Applied surface science (15.03.2004)
Published in Applied surface science (15.03.2004)
Get full text
Journal Article
Conference Proceeding
Strained silicon MOSFET technology
Hoyt, J.L., Nayfeh, H.M., Eguchi, S., Aberg, I., Xia, G., Drake, T., Fitzgerald, E.A., Antoniadis, D.A.
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
Get full text
Conference Proceeding
Abrupt phosphorus profiles in Si: Effects of temperature and substitutional carbon on phosphorus autodoping
SINGH, D. V, HOYT, J. L, GIBBONS, J. F
Published in Journal of the Electrochemical Society (01.09.2003)
Published in Journal of the Electrochemical Society (01.09.2003)
Get full text
Journal Article
Polycrystalline carbon : a novel material for gate electrodes in MOS technology
Get full text
Conference Proceeding
Journal Article
Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor deposition
HOYT, J. L, MITCHELL, T. O, RIM, K, SINGH, D. V, GIBBONS, J. F
Published in Thin solid films (26.05.1998)
Published in Thin solid films (26.05.1998)
Get full text
Conference Proceeding
A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs
Nayfeh, H.M., Hoyt, J.L., Antoniadis, D.A.
Published in IEEE transactions on electron devices (01.12.2004)
Published in IEEE transactions on electron devices (01.12.2004)
Get full text
Journal Article
Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs
Aberg, I., Cait Ni Chleirigh, Hoyt, J.L.
Published in IEEE transactions on electron devices (01.05.2006)
Published in IEEE transactions on electron devices (01.05.2006)
Get full text
Journal Article
Strain dependence of the performance enhancement in strained-Si n-MOSFETs
Welser, J., Hoyt, J.L., Takagi, S., Gibbons, J.F.
Published in International Electron Devices Meeting. I E D M Technical Digest. pp. 373-376. 1994 (1994)
Published in International Electron Devices Meeting. I E D M Technical Digest. pp. 373-376. 1994 (1994)
Get full text
Conference Proceeding
Journal Article
Limited reaction processing : growth of Si1-xGex/Si for heterojunction bipolar transistor applications
HOYT, J. L, KING, C. A, KAMINS, T. I, NOBLE, D. B, GRONET, C. M, GIBBONS, J. F, SCOTT, M. P, LADERMAN, S. S, ROSNER, S. J, NAUKA, K, TURNER, J
Published in Thin solid films (1990)
Published in Thin solid films (1990)
Get full text
Conference Proceeding