Phonon-assisted charge carriers thermalization in semiconductor Si and metallic silicide NiSi2, CoSi2: A non-adiabatic molecular dynamics study
Luo, Kun, Gan, Weizhuo, Hou, Zhaozhao, Zhan, Guohui, Xu, Lijun, Liu, Jiangtao, Wu, Zhenhua
Published in Journal of applied physics (14.07.2024)
Published in Journal of applied physics (14.07.2024)
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Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si0.45Ge0.55, Ge Gate-All-Around NSFET for 5 nm Technology Node
Yao, Jiaxin, Yin, Huaxiang, Wang, Wenwu, Li, Jun, Luo, Kun, Yu, Jiahan, Zhang, Qingzhu, Hou, Zhaozhao, Gu, Jie, Yang, Wen, Wu, Zhenhua
Published in IEEE journal of the Electron Devices Society (2018)
Published in IEEE journal of the Electron Devices Society (2018)
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FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2
Zhang, Zhaohao, Xu, Gaobo, Zhang, Qingzhu, Hou, Zhaozhao, Li, Junjie, Kong, ZhenZhen, Zhang, Yongkui, Xiang, Jinjuan, Xu, Qiuxia, Wu, Zhenhua, Zhu, Huilong, Yin, Huaxiang, Wang, Wenwu, Ye, Tianchun
Published in IEEE electron device letters (01.03.2019)
Published in IEEE electron device letters (01.03.2019)
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Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)
Zhong, Kun, Zhang, Fan, Zhang, Zhaohao, Zhang, Qingzhu, Hou, Zhaozhao, Zhao, Chunsong, Han, Genquan, Xu, Gaobo, Li, Junfeng, Liu, Yan, Xu, Jeffrey, Yin, Huaxiang
Published in IEEE electron device letters (01.07.2024)
Published in IEEE electron device letters (01.07.2024)
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Journal Article
The Effect of Thermal Treatment Induced Performance Improvement for Charge Trapping Memory with Al 2 O 3 /(HfO 2 ) 0.9 (Al 2 O 3 ) 0.1 /Al 2 O 3 Multilayer Structure
Hou, Zhaozhao, Wu, Zhenhua, Yin, Huaxiang
Published in ECS journal of solid state science and technology (2018)
Published in ECS journal of solid state science and technology (2018)
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Journal Article
FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf 0.5 Zr 0.5 O 2
Zhang, Zhaohao, Xu, Gaobo, Zhang, Qingzhu, Hou, Zhaozhao, Li, Junjie, Kong, ZhenZhen, Zhang, Yongkui, Xiang, Jinjuan, Xu, Qiuxia, Wu, Zhenhua, Zhu, Huilong, Yin, Huaxiang, Wang, Wenwu, Ye, Tianchun
Published in IEEE electron device letters (01.03.2019)
Published in IEEE electron device letters (01.03.2019)
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Journal Article
Investigation for the Feasibility of High-Mobility Channel in 3D NAND Memory
Hou, Zhaozhao, Yao, Jiaxin, Wu, Zhenhua, Yin, Huaxiang
Published in ECS journal of solid state science and technology (01.01.2018)
Published in ECS journal of solid state science and technology (01.01.2018)
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Journal Article
Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure
Hou, Zhaozhao, Zhang, Qingzhu, Yin, Huaxiang, Xiang, Jinjuan, Qin, Changliang, Yao, Jiaxin, Gu, Jie
Published in ECS journal of solid state science and technology (01.01.2017)
Published in ECS journal of solid state science and technology (01.01.2017)
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Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology
Yao, Jiaxin, Yin, Huaxiang, Wu, Zhenhua, Gao, Jianfeng, Zhang, Qingzhu, Hou, Zhaozhao, Gu, Jie, Luo, Kun
Published in ECS journal of solid state science and technology (2018)
Published in ECS journal of solid state science and technology (2018)
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강유전체 메모리 및 저장 장치
TAN WANLIANG, JING WEILIANG, FANG YICHEN, XU JEFFREY JUNHAO, ZHANG YU, BU SITONG, HOU ZHAOZHAO, ZHANG HENG, WU YING
Year of Publication 27.06.2023
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Year of Publication 27.06.2023
Patent
Physical Insights on Quantum Confinement and Carrier Mobility in Si, Si 0.45 Ge 0.55 , Ge Gate-All-Around NSFET for 5 nm Technology Node
Yao, Jiaxin, Yin, Huaxiang, Wang, Wenwu, Li, Jun, Luo, Kun, Yu, Jiahan, Zhang, Qingzhu, Hou, Zhaozhao, Gu, Jie, Yang, Wen, Wu, Zhenhua
Published in IEEE journal of the Electron Devices Society (2018)
Published in IEEE journal of the Electron Devices Society (2018)
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Journal Article
Investigation of Quantum-Dot Characteristic Based on Different Bulk Silicon FinFET Device Models
Gu, Jie, Hou, Zhaozhao, Yao, Jiaxin, Wu, Zhenhua, Yin, Huaxiang
Published in 2019 China Semiconductor Technology International Conference (CSTIC) (01.03.2019)
Published in 2019 China Semiconductor Technology International Conference (CSTIC) (01.03.2019)
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Conference Proceeding
Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach
Luo, Kun, Gan, Weizhuo, Hou, Zhaozhao, Zhan, Guohui, Xu, Lijun, Liu, Jiangtao, Lu, Ye, Wu, Zhenhua
Year of Publication 14.02.2023
Year of Publication 14.02.2023
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Journal Article