Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V‑Pit Formation on the AlGaN/GaN Interface
Hospodková, Alice, Hájek, František, Hubáček, Tomáš, Gedeonová, Zuzana, Hubík, Pavel, Hývl, Matěj, Pangrác, Jiří, Dominec, Filip, Košutová, Tereza
Published in ACS applied materials & interfaces (19.04.2023)
Published in ACS applied materials & interfaces (19.04.2023)
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Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy
Hospodková, Alice, Pangrác, Jiří, Vyskočil, Jan, Zíková, Markéta, Oswald, Jiří, Komninou, Philomela, Hulicius, Eduard
Published in Journal of crystal growth (15.03.2015)
Published in Journal of crystal growth (15.03.2015)
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Preparation, characterization and photocatalytic properties of cerium doped TiO2: On the effect of Ce loading on the photocatalytic reduction of carbon dioxide
Matějová, Lenka, Kočí, Kamila, Reli, Martin, Čapek, Libor, Hospodková, Alice, Peikertová, Pavlína, Matěj, Zdeněk, Obalová, Lucie, Wach, Anna, Kuśtrowski, Piotr, Kotarba, Andrzej
Published in Applied catalysis. B, Environmental (25.06.2014)
Published in Applied catalysis. B, Environmental (25.06.2014)
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Response of InGaN/GaN multiple quantum well structure to UV-C and vacuum UV optical excitation
Hájek, František, Jarý, Vítězslav, Babin, Vladimir, Vaněček, Vojtěch, Hubáček, Tomáš, Hospodková, Alice, Dominec, Filip, Košutová, Tereza
Published in Journal of luminescence (01.05.2024)
Published in Journal of luminescence (01.05.2024)
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Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers
Hospodková, Alice, Čížek, Jakub, Hájek, František, Hubáček, Tomáš, Pangrác, Jiří, Dominec, Filip, Kuldová, Karla, Batysta, Jan, Liedke, Maciej O., Hirschmann, Eric, Butterling, Maik, Wagner, Andreas
Published in Materials (01.10.2022)
Published in Materials (01.10.2022)
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Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design
Hájek, František, Hospodková, Alice, Hubík, Pavel, Gedeonová, Zuzana, Hubáček, Tomáš, Pangrác, Jiří, Kuldová, Karla
Published in Semiconductor science and technology (01.07.2021)
Published in Semiconductor science and technology (01.07.2021)
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Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
Vaněk, Tomáš, Hájek, František, Dominec, Filip, Hubáček, Tomáš, Kuldová, Karla, Pangrác, Jiří, Košutová, Tereza, Kejzlar, Pavel, Bábor, Petr, Lachowski, Artur, Hospodková, Alice
Published in Journal of crystal growth (01.07.2021)
Published in Journal of crystal growth (01.07.2021)
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Journal Article
InGaN GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study
Hospodková, Alice, Nikl, Martin, Pacherová, Oliva, Oswald, Ji í, Br a, Petr, Pánek, Dalibor, Foltynski, Bartosz, Hulicius, Eduard, Beitlerová, Alena, Heuken, Michael
Published in Nanotechnology (14.11.2014)
Published in Nanotechnology (14.11.2014)
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Journal Article
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
Dominec, Filip, Hospodková, Alice, Hubáček, Tomáš, Zíková, Markéta, Pangrác, Jiří, Kuldová, Karla, Vetushka, Aliaksei, Hulicius, Eduard
Published in Journal of crystal growth (01.02.2019)
Published in Journal of crystal growth (01.02.2019)
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Photocatalytic H2 generation from aqueous ammonia solution using ZnO photocatalysts prepared by different methods
Reli, Martin, Edelmannová, Miroslava, Šihor, Marcel, Praus, Petr, Svoboda, Ladislav, Mamulová, Kateřina Kutláková, Otoupalíková, Hana, Čapek, Libor, Hospodková, Alice, Obalová, Lucie, Kočí, Kamila
Published in International journal of hydrogen energy (20.07.2015)
Published in International journal of hydrogen energy (20.07.2015)
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GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications
Vyskočil, Jan, Hospodková, Alice, Petříček, Otto, Pangrác, Jiří, Zíková, Markéta, Oswald, Jiří, Vetushka, Aliaksei
Published in Journal of crystal growth (15.04.2017)
Published in Journal of crystal growth (15.04.2017)
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Journal Article
Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
Hubáček, Tomáš, Hospodková, Alice, Kuldová, Karla, Oswald, Jiří, Pangrác, Jiří, Jarý, Vitězslav, Dominec, Filip, Slavická Zíková, Markéta, Hájek, František, Hulicius, Eduard, Vetushka, Alexej, Ledoux, Gilles, Dujardin, Christophe, Nikl, Martin
Published in CrystEngComm (2019)
Published in CrystEngComm (2019)
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Journal Article
Donor-Acceptor Pairs Recombination as the Origin of the Emission Shift In InGaN/GaN Scintillator Heterostructures Doped with Zn
Hájek, František, Jarý, Vítězslav, Hubáček, Tomáš, Dominec, Filip, Hospodková, Alice, Kuldová, Karla, Oswald, Jiří, Pangrác, Jiří, Vaněk, Tomáš, Buryi, Maksym, Ledoux, Gilles, Dujardin, Christophe
Published in ECS journal of solid state science and technology (01.06.2023)
Published in ECS journal of solid state science and technology (01.06.2023)
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Journal Article
InGaN/GaN Structures: Effect of the Quantum Well Number on the Cathodoluminescent Properties
Hospodková, Alice, Hubáček, Tomáš, Oswald, Jiří, Pangrác, Jiří, Kuldová, Karla, Hývl, Matěj, Dominec, Filip, Ledoux, Gilles, Dujardin, Christophe
Published in physica status solidi (b) (01.05.2018)
Published in physica status solidi (b) (01.05.2018)
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Comprehensive empirical modeling of ScAlN/AlGaN/GaN ferroelectric HEMT
Pyngrope, Dariskhem, Chaturvedi, Nidhi, Dasgupta, Sudeb, Hospodkov, Alice, Majumdar, Shubhankar
Published in Semiconductor science and technology (01.07.2024)
Published in Semiconductor science and technology (01.07.2024)
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Journal Article
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 mu m
Zikova, Marketa, Hospodkova, Alice, Pangrac, Jiri, Oswald, Jiri, Krcil, Pavel, Hulicius, Eduard, Komninou, Philomela, Kioseoglou, Joseph
Published in Journal of crystal growth (15.03.2015)
Published in Journal of crystal growth (15.03.2015)
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