A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology
Kanda, Kazushige, Koyanagi, Masaru, Yamamura, Toshio, Hosono, Koji, Yoshihara, Masahiro, Miwa, Toru, Kato, Yosuke, Mak, Alex, Chan, Siu Lung, Tsai, Frank, Cernea, Raul, Le, Binh, Makino, Eiichi, Taira, Takashi, Otake, Hiroyuki, Kajimura, Norifumi, Fujimura, Susumu, Takeuchi, Yoshiaki, Itoh, Mikihiko, Shirakawa, Masanobu, Nakamura, Dai, Suzuki, Yuya, Okukawa, Yuki, Kojima, Masatsugu, Yoneya, Kazuhide, Arizono, Takamichi, Hisada, Toshiki, Miyamoto, Shinji, Noguchi, Mitsuhiro, Yaegashi, Toshitake, Higashitani, Masaaki, Ito, Fumitoshi, Kamei, Teruhiko, Hemink, Gertjan, Maruyama, Tooru, Ino, Kazumi, Ohshima, Shigeo
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
Published in 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers (01.02.2008)
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Conference Proceeding
Semiconductor integrated circuit adapted to output pass/fail results of internal operations
Hosono, Koji, Kawai, Koichi, Nakamura, Hiroshi, Imamiya, Kenichi, Yamamura, Toshio
Year of Publication 05.04.2022
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Year of Publication 05.04.2022
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