Investigation of propagation and coalescence of threading screw and mixed dislocations in 4H-SiC crystals grown by the high-temperature gas source method
Kamata, Isaho, Hoshino, Norihiro, Betsuyaku, Kiyoshi, Kanda, Takahiro, Tsuchida, Hidekazu
Published in Journal of crystal growth (15.07.2022)
Published in Journal of crystal growth (15.07.2022)
Get full text
Journal Article
Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method
Hoshino, Norihiro, Kamata, Isaho, Kanda, Takahiro, Tokuda, Yuichiro, Kuno, Hironari, Tsuchida, Hidekazu
Published in Applied physics express (01.09.2020)
Published in Applied physics express (01.09.2020)
Get full text
Journal Article
Fast growth of n-type 4H-SiC bulk crystal by gas-source method
Hoshino, Norihiro, Kamata, Isaho, Tokuda, Yuichiro, Makino, Emi, Kanda, Takahiro, Sugiyama, Naohiro, Kuno, Hironari, Kojima, Jun, Tsuchida, Hidekazu
Published in Journal of crystal growth (15.11.2017)
Published in Journal of crystal growth (15.11.2017)
Get full text
Journal Article
Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes
Yamazaki, Yuichi, Sato, Shin Ichiro, Lee, Sang Yun, Chiba, Yoji, Makino, Takahiro, Hijikata, Yasuto, Tsuchida, Hidekazu, Hoshino, Norihiro, Ohshima, Takeshi, Yamada, Naoto, Kojima, Kazutoshi, Satoh, Takahiro
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
Get full text
Journal Article
Stable and high-speed SiC bulk growth without dendrites by the HTCVD method
Tokuda, Yuichiro, Makino, Emi, Sugiyama, Naohiro, Kamata, Isaho, Hoshino, Norihiro, Kojima, Jun, Hara, Kazukuni, Tsuchida, Hidekazu
Published in Journal of crystal growth (15.08.2016)
Published in Journal of crystal growth (15.08.2016)
Get full text
Journal Article
Deflection of threading dislocations in patterned 4H–SiC epitaxial growth
Tsuchida, Hidekazu, Takanashi, Ryosuke, Kamata, Isaho, Hoshino, Norihiro, Makino, Emi, Kojima, Jun
Published in Journal of crystal growth (15.09.2014)
Published in Journal of crystal growth (15.09.2014)
Get full text
Journal Article
Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
Kojima, Jun, Tokuda, Yuichiro, Sugiyama, Naohiro, Hoshino, Norihiro, Makino, Emi, Kamata, Isaho, Tsuchida, Hidekazu
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
Get full text
Journal Article
Nondestructive Analysis of Propagation of Stacking Faults in SiC Bulk Substrate and Epitaxial Layer by Photoluminescence Mapping
Hoshino, Norihiro, Tajima, Michio, Nishiguchi, Taro, Ikeda, Keiichi, Hayashi, Toshihiko, Kinoshita, Hiroyuki, Shiomi, Hiromu
Published in Japanese Journal of Applied Physics (01.10.2007)
Published in Japanese Journal of Applied Physics (01.10.2007)
Get full text
Journal Article
Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method
Kanda, Takahiro, Ohya, Nobuyuki, Okamoto, Takeshi, Betsuyaku, Kiyoshi, Tokuda, Yuichiro, Hoshino, Norihiro, Tsuchida, Hidekazu, Kamata, Isaho
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
Get full text
Journal Article
Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
Kanda, Takahiro, Ohya, Nobuyuki, Okamoto, Takeshi, Kamata, Isaho, Tokuda, Yuichiro, Uehigashi, Hideyuki, Tsuchida, Hidekazu, Hoshino, Norihiro, Kuno, Hironari
Published in Materials science forum (28.07.2020)
Published in Materials science forum (28.07.2020)
Get full text
Journal Article
Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method
Kanda, Takahiro, Betsuyaku, Kiyoshi, Ohya, Nobuyuki, Uehigashi, Hideyuki, Okamoto, Takeshi, Horiai, Akiyoshi, Hoshino, Norihiro, Tsuchida, Hidekazu, Kamata, Isaho, Sakakibara, Soma, Kanemura, Takashi
Published in Solid state phenomena (25.05.2023)
Published in Solid state phenomena (25.05.2023)
Get full text
Journal Article
SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
HORIAI AKIYOSHI, TSUCHIDA SHUICHI, HOSHINO NORIHIRO, BETSUYAKU KIYOSHI, KAMATA ISAO, OKAMOTO TAKESHI, KANEMURA TAKASHI, KANDA TAKAHIRO
Year of Publication 14.09.2023
Get full text
Year of Publication 14.09.2023
Patent
SILICON CARBIDE SINGLE CRYSTAL, AND PRODUCTION METHOD THEREOF
TOKUDA YUICHIRO, HORIAI AKIYOSHI, TSUCHIDA SHUICHI, HOSHINO NORIHIRO, KAMATA ISAO
Year of Publication 10.06.2021
Get full text
Year of Publication 10.06.2021
Patent
MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL WAFER AND SILICON CARBIDE SINGLE CRYSTAL INGOT
TOKUDA YUICHIRO, TSUCHIDA SHUICHI, HOSHINO NORIHIRO, KAMATA ISAO, OKAMOTO TAKESHI
Year of Publication 01.04.2021
Get full text
Year of Publication 01.04.2021
Patent