Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography
Tsutsui, Kazuo, Matsushita, Tomohiro, Natori, Kotaro, Muro, Takayuki, Morikawa, Yoshitada, Hoshii, Takuya, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Hayashi, Kouichi, Matsui, Fumihiko, Kinoshita, Toyohiko
Published in Nano letters (13.12.2017)
Published in Nano letters (13.12.2017)
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Journal Article
Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination
Mizutani, Kazuto, Hoshii, Takuya, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Chang, Edward Y., Kakushima, Kuniyuki
Published in Applied physics express (01.12.2022)
Published in Applied physics express (01.12.2022)
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Journal Article
Experimental demonstration of high-gain CMOS inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs
Kawanago, Takamasa, Matsuzaki, Takahiro, Kajikawa, Ryosuke, Iriya Muneta, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.05.2022)
Published in Japanese Journal of Applied Physics (01.05.2022)
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Journal Article
Enhancement-mode accumulation capacitance-voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks
Tanigawa, Haruki, Matsuura, Kentaro, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in Japanese Journal of Applied Physics (01.07.2020)
Published in Japanese Journal of Applied Physics (01.07.2020)
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Journal Article
High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization
Hamada, Masaya, Matsuura, Kentaro, Sakamoto, Takuro, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (01.01.2019)
Published in IEEE journal of the Electron Devices Society (01.01.2019)
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Journal Article
Photoassisted impedance spectroscopy for quantum dot solar cells
Hoshii, Takuya, Naitoh, Shunya, Okada, Yoshitaka
Published in Japanese Journal of Applied Physics (01.04.2016)
Published in Japanese Journal of Applied Physics (01.04.2016)
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Journal Article
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-type and P-type Tungsten Diselenide Field-Effect Transistors with Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact
Kawanago, Takamasa, Kajikawa, Ryosuke, Mizutani, Kazuto, Tsai, Sung-Lin, Muneta, Iriya, Hoshii, Takuya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Wakabayashi, Hitoshi
Published in IEEE journal of the Electron Devices Society (01.01.2023)
Published in IEEE journal of the Electron Devices Society (01.01.2023)
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Journal Article
Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs
Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Kakushima, Kuniyuki, Hoshii, Takuya, Tsutsui, Kazuo, Iwai, Hiroshi, Nishizawa, Shin-ichi, Omura, Ichiro, Hiramoto, Toshiro
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching
Tamura, Yosuke, Kaizu, Toshiyuki, Kiba, Takayuki, Igarashi, Makoto, Tsukamoto, Rikako, Higo, Akio, Hu, Weiguo, Thomas, Cedric, Fauzi, Mohd Erman, Hoshii, Takuya, Yamashita, Ichiro, Okada, Yoshitaka, Murayama, Akihiro, Samukawa, Seiji
Published in Nanotechnology (19.07.2013)
Published in Nanotechnology (19.07.2013)
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Journal Article
NiSi2 as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO2 thin films
Molina-Reyes, Joel, Hoshii, Takuya, Ohmi, Shun-Ichiro, Funakubo, Hiroshi, Hori, Atsushi, Fujiwara, Ichiro, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Kakushima, Kuniyuki
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs
Takeuchi, Kiyoshi, Fukui, Munetoshi, Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Numasawa, Yohichiroh, Shigyo, Naoyuki, Kakushima, Kuniyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Watanabe, Masahiro, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Saito, Wataru, Nishizawa, Shin-Ichi, Tsukuda, Masanori, Omura, Ichiro, Ohashi, Hiromichi, Hiramoto, Toshiro
Published in IEEE transactions on semiconductor manufacturing (01.05.2020)
Published in IEEE transactions on semiconductor manufacturing (01.05.2020)
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Journal Article
Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates
Hoshii, Takuya, Nakajima, Akira, Nishizawa, Shin-ichi, Ohashi, Hiromichi, Kakushima, Kuniyuki, Wakabayashi, Hitoshi, Tsutsui, Kazuo
Published in Japanese Journal of Applied Physics (01.06.2019)
Published in Japanese Journal of Applied Physics (01.06.2019)
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Journal Article
Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si
Deura, Momoko, Hoshii, Takuya, Takenaka, Mitsuru, Takagi, Shinichi, Nakano, Yoshiaki, Sugiyama, Masakazu
Published in Journal of crystal growth (15.11.2008)
Published in Journal of crystal growth (15.11.2008)
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Journal Article
Conference Proceeding
Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy
Deura, Momoko, Hoshii, Takuya, Yamamoto, Takahisa, Ikuhara, Yuichi, Takenaka, Mitsuru, Takagi, Shinichi, Nakano, Yoshiaki, Sugiyama, Masakazu
Published in Applied physics express (01.01.2009)
Published in Applied physics express (01.01.2009)
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Journal Article
Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas
Hoshii, Takuya, Deura, Momoko, Sugiyama, Masakazu, Nakane, Ryosho, Sugahara, Satoshi, Takenaka, Mitsuru, Nakano, Yoshiaki, Takagi, Shinichi
Published in Physica status solidi. C (01.07.2008)
Published in Physica status solidi. C (01.07.2008)
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Journal Article
Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing
Jevasuwan, Wipakorn, Urabe, Yuji, Maeda, Tatsuro, Miyata, Noriyuki, Yasuda, Tetsuji, Ohtake, Akihiro, Yamada, Hisashi, Hata, Masahiko, Lee, Sunghoon, Hoshii, Takuya, Takenaka, Mitsuru, Takagi, Shinichi
Published in Japanese Journal of Applied Physics (01.06.2012)
Published in Japanese Journal of Applied Physics (01.06.2012)
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Journal Article
Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing
Jevasuwan, Wipakorn, Urabe, Yuji, Maeda, Tatsuro, Miyata, Noriyuki, Yasuda, Tetsuji, Ohtake, Akihiro, Yamada, Hisashi, Hata, Masahiko, Lee, Sunghoon, Hoshii, Takuya, Takenaka, Mitsuru, Takagi, Shinichi
Published in Japanese Journal of Applied Physics (01.06.2012)
Published in Japanese Journal of Applied Physics (01.06.2012)
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Journal Article