Positive flatband voltage shift in phosphorus doped SiO2/N-type 4H-SiC MOS capacitors under high field electron injection
Idris, M I, Weng, M H, Peters, A, Siddall, R J, Townsend, N J, Wright, N G, Horsfall, A B
Published in Journal of physics. D, Applied physics (11.12.2019)
Published in Journal of physics. D, Applied physics (11.12.2019)
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Journal Article
Dose Rate Linearity in 4H-SiC Schottky Diode-Based Detectors at Elevated Temperatures
Mohamed, N. S., Wright, N. G., Horsfall, A. B.
Published in IEEE transactions on nuclear science (01.07.2017)
Published in IEEE transactions on nuclear science (01.07.2017)
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Journal Article
Recent advance in high manufacturing readiness level and high temperature CMOS mixed-signal integrated circuits on silicon carbide
Weng, M H, Clark, D T, Wright, S N, Gordon, D L, Duncan, M A, Kirkham, S J, Idris, M I, Chan, H K, Young, R A R, Ramsay, E P, Wright, N G, Horsfall, A B
Published in Semiconductor science and technology (25.04.2017)
Published in Semiconductor science and technology (25.04.2017)
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Journal Article
The vacancy-hydrogen defect in diamond: A computational study
Peaker, C. V., Goss, J. P., Briddon, P. R., Horsfall, A. B., Rayson, M. J.
Published in Physica status solidi. A, Applications and materials science (01.11.2015)
Published in Physica status solidi. A, Applications and materials science (01.11.2015)
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Journal Article
The effect of electrode parameters on the performance of anion exchange polymer membrane fuel cells
Mamlouk, M., Scott, K., Horsfall, J.A., Williams, C.
Published in International journal of hydrogen energy (01.06.2011)
Published in International journal of hydrogen energy (01.06.2011)
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Journal Article
Forming-Free Reversible Bipolar Resistive Switching Behavior in Al-Doped HfO2 Metal–Insulator–Metal Devices
Mahapatra, R., Horsfall, A. B., Wright, N.G.
Published in Journal of electronic materials (01.04.2012)
Published in Journal of electronic materials (01.04.2012)
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Journal Article
Plasma-based chemical modification of epitaxial graphene with oxygen functionalities
Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.
Published in Surface & coatings technology (25.02.2014)
Published in Surface & coatings technology (25.02.2014)
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Journal Article
Conference Proceeding
High Temperature CMOS Circuits on Silicon Carbide
Murphy, A., Horsfall, A., Ramsay, E., Wright, Sean, Smith, D., Thompson, R., Young, R., Breeze, James, Clark, David T.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
SiC X-ray detectors for harsh environments
Lees, J E, Barnett, A M, Bassford, D J, Stevens, R C, Horsfall, A B
Published in Journal of instrumentation (01.01.2011)
Published in Journal of instrumentation (01.01.2011)
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Journal Article
Effect of different surface coverages of transition metals on the electronic and structural properties of diamond
Tiwari, Amit K., Goss, J. P., Briddon, P. R., Wright, N. G., Horsfall, A. B., Rayson, M. J.
Published in Physica status solidi. A, Applications and materials science (01.09.2012)
Published in Physica status solidi. A, Applications and materials science (01.09.2012)
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Journal Article
Bromine functionalisation of diamond: An ab initio study
Tiwari, Amit K., Goss, J. P., Briddon, P. R., Wright, N. G., Horsfall, A. B., Rayson, M. J.
Published in Physica status solidi. A, Applications and materials science (01.09.2012)
Published in Physica status solidi. A, Applications and materials science (01.09.2012)
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Journal Article
Thermodynamic stability and electronic properties of F- and Cl-terminated diamond
Tiwari, Amit K., Goss, J. P., Briddon, P. R., Wright, N. G., Horsfall, A. B., Jones, R., Pinto, H., Rayson, M. J.
Published in Physica status solidi. A, Applications and materials science (01.09.2012)
Published in Physica status solidi. A, Applications and materials science (01.09.2012)
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Journal Article
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
Vassilevski, K V, Wright, N G, Nikitina, I P, Horsfall, A B, O'Neill, A G, Uren, M J, Hilton, K P, Masterton, A G, Hydes, A J, Johnson, C M
Published in Semiconductor science and technology (01.03.2005)
Published in Semiconductor science and technology (01.03.2005)
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Journal Article
Influence of Phosphorous Auto-Doping on the Characteristics of SiO2/SiC Gate Dielectrics
Furnival, B.J.D., Horsfall, A.B., Weng, Ming Hung, Ramsay, Ewan P., Murphy, A.E., Ryan, Craig, Smith, Dave A., Thompson, Robin. F., Young, R.A.R., Clark, David T.
Published in Materials science forum (30.06.2015)
Published in Materials science forum (30.06.2015)
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Journal Article
An array of WO3 and CTO heterojunction semiconducting metal oxide gas sensors used as a tool for explosive detection
Horsfall, Lauren A, Pugh, David C, Blackman, Christopher S, Parkin, Ivan P
Published in Journal of materials chemistry. A, Materials for energy and sustainability (2017)
Published in Journal of materials chemistry. A, Materials for energy and sustainability (2017)
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Journal Article