Resist and sidewall film removal after Al reactive ion etching (RIE) employing F+H2O downstream ashing
JIMBO, S, SHIMOMURA, K, OHIWA, T, SEKINE, M, MORI, H, HORIOKA, K, OKANO, H
Published in Japanese journal of applied physics (01.06.1993)
Published in Japanese journal of applied physics (01.06.1993)
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Conference Proceeding
A new high-density plasma etching system using a dipole-ring magnet
SEKINE, M, NARITA, M, HORIOKA, K, YOSHIDA, Y, OKANO, H
Published in Japanese Journal of Applied Physics (1995)
Published in Japanese Journal of Applied Physics (1995)
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Journal Article
Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H 2 O Downstream Ashing
Jimbo, Sadayuki, Shimomura, Kouji, Ohiwa, Tokuhisa, Sekine, Makoto, Mori, Haruki, Keiji Horioka, Keiji Horioka, Haruo Okano, Haruo Okano
Published in Japanese Journal of Applied Physics (01.06.1993)
Published in Japanese Journal of Applied Physics (01.06.1993)
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Journal Article
Single silicon etching profile simulation
ARIKADO, T, HORIOKA, K, SEKINE, M, OKANO, H, HORIIKE, Y
Published in Japanese Journal of Applied Physics (1988)
Published in Japanese Journal of Applied Physics (1988)
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Journal Article
SiO2 tapered etching employing magnetron discharge of fluorocarbon gas
OHIWA, T, HORIOKA, K, ARIKADO, T, HASEGAWA, I, OKANO, H
Published in Japanese journal of applied physics (01.02.1992)
Published in Japanese journal of applied physics (01.02.1992)
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Journal Article
Influence of Al surface modification on selectivity in via-hole etching employing CHF3 plasma
OHIWA, T, ARIKADO, T, HORIOKA, K, HASEGAWA, I, MATSUSHITA, T, SHIMOMURA, K, OKANO, H
Published in Japanese journal of applied physics (01.11.1992)
Published in Japanese journal of applied physics (01.11.1992)
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Journal Article
The Crystal Structure of Bis(acetylacetonato)platinum(II)
Onuma, Shigeki, Horioka, Keiji, Inoue, Hironao, Shibata, Shuzo
Published in Bulletin of the Chemical Society of Japan (01.09.1980)
Published in Bulletin of the Chemical Society of Japan (01.09.1980)
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Journal Article
Dispersion of Surface-Plasmon at Clean Si(001)-2×1 Surface
Iwasaki, Hiroshi, Maruno, Shigemitsu, Horioka, Keiji, Li, Sung Te, Nakamura, Shogo
Published in Japanese Journal of Applied Physics (1981)
Published in Japanese Journal of Applied Physics (1981)
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Journal Article
METHOD OF ETCHING OXIDE OR NITRIDE MATERIALS
HASEGAWA, ISAHIRO, TAHARA, YOSHIFUMI, HIRANO, YOSHIHISA, HORIOKA, KEIJI
Year of Publication 01.11.1999
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Year of Publication 01.11.1999
Patent
DRY ETCHING METHOD
HASEGAWA, ISAHIRO, MATSUSHITA, TAKAYA, TAHRA, YOSHIFUMI, HIRANO, YOSHIHISA, OGASAWARA, MASAHIRO, HORIOKA, KEIJI
Year of Publication 01.05.2000
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Year of Publication 01.05.2000
Patent
PLASMA PROCESSING APPARATUS
ENDO, TAMIO, ARAMI, JUNICHI, OKANO, HARUO, SHIRAISHI, DERUAKI, HASEKAWAI, SAHIRO, KIKUCHI, KAZUO, HORIOKA, KEIJI, KOYAMA, SIRO, OKUMURA, KAZUYA
Year of Publication 16.11.1998
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Year of Publication 16.11.1998
Patent