High-power InGaN light emitting diodes grown by molecular beam epitaxy
JOHNSON, K, BOUSQUET, V, HOOPER, S. E, KAUER, M, ZELLWEGER, C, HEFFERNAN, J
Published in Electronics letters (30.09.2004)
Published in Electronics letters (30.09.2004)
Get full text
Journal Article
InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
Hooper, S.E., Kauer, M., Bousquet, V., Johnson, K., Barnes, J.M., Heffernan, J.
Published in Electronics letters (2004)
Published in Electronics letters (2004)
Get full text
Journal Article
The growth and properties of group III nitrides
Foxon, C.T., Cheng, T.S., Novikov, S.V., Lacklison, D.E., Jenkins, L.C., Johnston, D., Orton, J.W., Hooper, S.E., Baba-Ali, N., Tansley, T.L., Tret'yakov, V.V.
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
Get full text
Journal Article
Conference Proceeding
Incorporation of Mg in GaN grown by molecular beam epitaxy
Orton, J.W., Foxon, C.T., Cheng, T.S., Hooper, S.E., Novikov, S.V., Ber, B.Ya, Kudriavtsev, Yu.A.
Published in Journal of crystal growth (01.02.1999)
Published in Journal of crystal growth (01.02.1999)
Get full text
Journal Article
Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates
Cheng, T.S., Hooper, S.E., Jenkins, L.C., Foxon, C.T., Lacklison, D.E., Dewsnip, J.D., Orton, J.W.
Published in Journal of crystal growth (01.09.1996)
Published in Journal of crystal growth (01.09.1996)
Get full text
Journal Article
Conference Proceeding
Auger investigation of group III nitride films grown by molecular beam epitaxy
Novikov, S.V., Foxon, C.T., Cheng, T.S., Tansley, T.L., Orton, J.W., Lacklison, D.E., Johnston, D., Baba-Ali, N., Hooper, S.E., Jenkins, L.C., Eaves, L.
Published in Journal of crystal growth (01.01.1995)
Published in Journal of crystal growth (01.01.1995)
Get full text
Journal Article
Conference Proceeding
The influence of virginiamycin on the live and processing performance of Nicholas turkey hens
Cervantes, H. M., Shim, M. Y., Hooper, S. E., Bafundo, K. W., Pesti, G. M.
Published in Journal of applied poultry research (01.09.2011)
Published in Journal of applied poultry research (01.09.2011)
Get full text
Journal Article
Continuous-wave operation of ingan multiple quantum well laser diodes grown by molecular beam epitaxy
KAUER, M, HOOPER, S. E, BOUSQUET, V, JOHNSON, K, ZELLWEGER, C, BARNES, J. M, WINDLE, J, SMEETON, T. M, HEFFEMAN, J
Published in Electronics letters (23.06.2005)
Published in Electronics letters (23.06.2005)
Get full text
Journal Article
Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots
Sénès, M., Smith, K.L., Smeeton, T.M., Hooper, S.E., Heffernan, J.
Published in Physica. E, Low-dimensional systems & nanostructures (01.04.2008)
Published in Physica. E, Low-dimensional systems & nanostructures (01.04.2008)
Get full text
Journal Article
Conference Proceeding
InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy
Hooper, S.E., Kauer, M., Bousquet, V., Johnson, K., Zellweger, C., Heffernan, J.
Published in Journal of crystal growth (01.05.2005)
Published in Journal of crystal growth (01.05.2005)
Get full text
Journal Article
Conference Proceeding
Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source
Hooper, S.E., Foxon, C.T., Cheng, T.S., Jenkins, L.C., Lacklison, D.E., Orton, J.W., Bestwick, T., Kean, A., Dawson, M., Duggan, G.
Published in Journal of crystal growth (01.10.1995)
Published in Journal of crystal growth (01.10.1995)
Get full text
Journal Article
Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations
Middleton, P.G., Trager-Cowan, C., O'Donnell, K.P., Cheng, T.S., Hooper, S.E., Foxon, C.T.
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1997)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (1997)
Get full text
Journal Article
Observation of resonant Raman lines during the photoluminescence of doped GaN
Dewsnip, D J, Andrianov, A V, Harrison, I, Lacklison, D E, Orton, J W, Morgan, J, Ren, G B, Cheng, T S, Hooper, S E, Foxon, C T
Published in Semiconductor science and technology (01.01.1997)
Published in Semiconductor science and technology (01.01.1997)
Get full text
Journal Article
Photoluminescence study of silicon-doped GaN grown by MBE on GaAs substrates
Orton, J.W., Lacklison, D.E., Andrianov, A.V., Cheng, T.S., Dewsnip, D.J., Foxon, C.T., Jenkins, L.C., Hooper, S.E.
Published in Solid-state electronics (01.02.1997)
Published in Solid-state electronics (01.02.1997)
Get full text
Journal Article
Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy
Cheng, T.S., Foxon, C.T., Jenkins, L.C., Hooper, S.E., Orton, J.W., Novikov, S.V., Popova, T.B., Tret'yakov, V.V.
Published in Journal of crystal growth (01.02.1996)
Published in Journal of crystal growth (01.02.1996)
Get full text
Journal Article
The molecular beam epitaxial growth of InAs on GaAs(111)B and (100) oriented substrates; a comparative growth study
Hooper, S.E., Westwood, D.I., Woolf, D.A., Williams, R.H.
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
Get full text
Journal Article
Conference Proceeding
InGaN laser diodes fabricated by MBE
Heffernan, J., Kauer, M., Johnson, K., Zellweger, C., Bousquet, V., Hooper, S.E.
Published in The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004 (2004)
Published in The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004 (2004)
Get full text
Conference Proceeding