Nitrides optoelectronic devices grown by molecular beam epitaxy
Kauer, M., Bousquet, V., Hooper, S. E., Barnes, J. M., Windle, J., Tan, W. S., Heffernan, J.
Published in Physica status solidi. A, Applications and materials science (01.01.2007)
Published in Physica status solidi. A, Applications and materials science (01.01.2007)
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Conference Proceeding
Effects of dietary selenium and moisture on the physical activity and thyroid axis of cats
Hooper, S. E., Backus, R., Amelon, S.
Published in Journal of animal physiology and animal nutrition (01.04.2018)
Published in Journal of animal physiology and animal nutrition (01.04.2018)
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Journal Article
InGaN multiple quantum well lasers grown by MBE
Heffernan, J., Kauer, M., Johnson, K., Zellweger, C., Hooper, S. E., Bousquet, V.
Published in Physica status solidi. A, Applications and materials science (01.04.2005)
Published in Physica status solidi. A, Applications and materials science (01.04.2005)
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Continuous-wave operation of ingan multiple quantum well laser diodes grown by molecular beam epitaxy
KAUER, M, HOOPER, S. E, BOUSQUET, V, JOHNSON, K, ZELLWEGER, C, BARNES, J. M, WINDLE, J, SMEETON, T. M, HEFFEMAN, J
Published in Electronics letters (23.06.2005)
Published in Electronics letters (23.06.2005)
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High-power InGaN light emitting diodes grown by molecular beam epitaxy
JOHNSON, K, BOUSQUET, V, HOOPER, S. E, KAUER, M, ZELLWEGER, C, HEFFERNAN, J
Published in Electronics letters (30.09.2004)
Published in Electronics letters (30.09.2004)
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Journal Article
Photoluminescence of MBE grown wurtzite Be-doped GaN
Dewsnip, D J, Andrianov, A V, Harrison, I, Orton, J W, Lacklison, D E, Ren, G B, Hooper, S E, Cheng, T S, Foxon, C T
Published in Semiconductor science and technology (01.05.1998)
Published in Semiconductor science and technology (01.05.1998)
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Journal Article
InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy
Hooper, S.E., Kauer, M., Bousquet, V., Johnson, K., Zellweger, C., Heffernan, J.
Published in Journal of crystal growth (01.05.2005)
Published in Journal of crystal growth (01.05.2005)
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Conference Proceeding
Low-temperature luminescence study of GaN films grown by MBE
Andrianov, A V, Lacklison, D E, Orton, J W, Dewsnip, D J, Hooper, S E, Foxon, C T
Published in Semiconductor science and technology (01.03.1996)
Published in Semiconductor science and technology (01.03.1996)
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Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
Foxon, C T, Hooper, S E, Cheng, T S, Orton, J W, Ren, G B, Ber, B Ya, Merkulov, A V, Novikov, S V, Tret'yakov, V V
Published in Semiconductor science and technology (01.12.1998)
Published in Semiconductor science and technology (01.12.1998)
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The growth and properties of group III nitrides
Foxon, C.T., Cheng, T.S., Novikov, S.V., Lacklison, D.E., Jenkins, L.C., Johnston, D., Orton, J.W., Hooper, S.E., Baba-Ali, N., Tansley, T.L., Tret'yakov, V.V.
Published in Journal of crystal growth (01.05.1995)
Published in Journal of crystal growth (01.05.1995)
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Conference Proceeding
Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy
Tan, W. S., Kauer, M., Hooper, S. E., Smeeton, T. M., Bousquet, V., Rossetti, M., Heffernan, J., Xiu, H., Humphreys, C. J.
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
Published in Physica status solidi. A, Applications and materials science (01.06.2009)
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Conference Proceeding
Observation of resonant Raman lines during the photoluminescence of doped GaN
Dewsnip, D J, Andrianov, A V, Harrison, I, Lacklison, D E, Orton, J W, Morgan, J, Ren, G B, Cheng, T S, Hooper, S E, Foxon, C T
Published in Semiconductor science and technology (01.01.1997)
Published in Semiconductor science and technology (01.01.1997)
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Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots
Sénès, M., Smith, K.L., Smeeton, T.M., Hooper, S.E., Heffernan, J.
Published in Physica. E, Low-dimensional systems & nanostructures (01.04.2008)
Published in Physica. E, Low-dimensional systems & nanostructures (01.04.2008)
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Conference Proceeding
Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)
Cheng, T S, Foxon, C T, Jenkins, L C, Hooper, S E, Lacklison, D E, Orton, J W, Ber, B Ya, Merkulov, A V, Novikov, S V
Published in Semiconductor science and technology (01.04.1996)
Published in Semiconductor science and technology (01.04.1996)
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Journal Article
Degradation of III-nitride laser diodes grown by molecular beam epitaxy
Xiu, H., Thrush, E. J., Kauer, M., Smeeton, T. M., Hooper, S. E., Heffernan, J., Humphreys, C. J.
Published in Physica status solidi. C (01.05.2008)
Published in Physica status solidi. C (01.05.2008)
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MBE growth and characterization of magnesium-doped gallium nitride
Dewsnip, D J, Orton, J W, Lacklison, D E, Flannery, L, Andrianov, A V, Harrison, I, Hooper, S E, Cheng, T S, Foxon, C T, Novikov, S N, Ber, B Ya, Kudriavtsev, Yu A
Published in Semiconductor science and technology (01.08.1998)
Published in Semiconductor science and technology (01.08.1998)
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The molecular beam epitaxial growth of InAs on GaAs(111)B and (100) oriented substrates; a comparative growth study
Hooper, S.E., Westwood, D.I., Woolf, D.A., Williams, R.H.
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
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Conference Proceeding
The growth and properties of mixed group V nitrides
Orton, J. W., Lacklison, D. E., Baba-Ali, N., Foxon, C. T., Cheng, T. S., Novikov, S. V., Johnston, D. F. C., Hooper, S. E., Jenkins, L. C., Challis, L. J., Tansley, T. L.
Published in Journal of electronic materials (01.04.1995)
Published in Journal of electronic materials (01.04.1995)
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