A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface
KIM, Chulbum, RYU, Jinho, LEE, Dooseop, KWAK, Pansuk, CHO, Seongsoon, YIM, Yongsik, CHO, Changhyun, JEONG, Woopyo, PARK, Kwangil, HAN, Jin-Man, SONG, Duheon, KYUNG, Kyehyun, LEE, Taesung, LIM, Young-Ho, JUN, Young-Hyun, KIM, Hyunggon, LIM, Jaewoo, JEONG, Jaeyong, SEO, Seonghwan, JEON, Hongsoo, KIM, Bokeun, LEE, Inyoul
Published in IEEE journal of solid-state circuits (01.04.2012)
Published in IEEE journal of solid-state circuits (01.04.2012)
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Conference Proceeding
13.3 A 280-Layer 1Tb 4b/cell 3D-NAND Flash Memory with a 28.5Gb/mm2 Areal Density and a 3.2GB/s High-Speed IO Rate
Jung, Wontaeck, Kim, Hyunggon, Kim, Do-Bin, Kim, Tae-Hyun, Lee, Namhee, Shin, Dongjin, Kim, Minyoung, Rho, Youngsik, Lee, Hun-Jong, Hyun, Yujin, Park, Jaeyoung, Kim, Taekyung, Kim, Hwiwon, Lee, Gyeongwon, Lee, Jisang, Jang, Joonsuc, Park, Jungmin, Kim, Sion, Jeon, Su Chang, Kim, Suyong, Song, Jung-Ho, Kim, Min-Seok, Lee, Taesung, Chun, Byung-Kwan, Kim, Tongsung, Lee, Young Gyu, Lee, Hokil, Lee, Soowoong, Lee, Hwaseok, Cho, Dooho, Nam, Sang-Wan, Kim, Yeomyung, Yoon, Kunyong, Lee, Yoonjae, Kim, Sunghoon, Hwang, Jungseok, Song, Raehyun, Jang, Hyunsik, Son, Jaeick, Jeon, Hongsoo, Lee, Myunghun, Lee, Mookyung, Kim, Kisung, Lee, Eungsuk, Lee, Myeongwoo, Jo, Sungkyu, Kim, Chan Ho, Park, Jong Chul, Yun, Kyunghwa, Seol, Soonock, Cho, Ji-Ho, Lee, Seungjae, Lee, Jin-Yub, Hur, Sung-Hoi
Published in 2024 IEEE International Solid-State Circuits Conference (ISSCC) (18.02.2024)
Published in 2024 IEEE International Solid-State Circuits Conference (ISSCC) (18.02.2024)
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Conference Proceeding
30.3 A 512Gb 3b/Cell 7th -Generation 3D-NAND Flash Memory with 184MB/s Write Throughput and 2.0Gb/s Interface
Cho, Jiho, Kang, D. Chris, Park, Jongyeol, Nam, Sang-Wan, Song, Jung-Ho, Jung, Bong-Kil, Lyu, Jaedoeg, Lee, Hogil, Kim, Won-Tae, Jeon, Hongsoo, Kim, Sunghoon, Kim, In-Mo, Son, Jae-Ick, Kang, Kyoungtae, Shim, Sang-Won, Park, JongChul, Lee, Eungsuk, Kang, Kyung-Min, Park, Sang-Won, Lee, Jaeyun, Moon, Seung Hyun, Kwak, Pansuk, Jeong, ByungHoon, Lee, Cheon An, Kim, Kisung, Ko, Junyoung, Kwon, Tae-Hong, Lee, Junha, Lee, Yohan, Kim, Chaehoon, Lee, Myeong-Woo, Yun, Jeong-yun, Lee, HoJun, Choi, Yonghyuk, Hong, Sanggi, Park, JongHoon, Shin, Yoonsung, Kim, Hojoon, Kim, Hansol, Yoon, Chiweon, Byeon, Dae Seok, Lee, Seungjae, Lee, Jin-Yub, Song, Jaihyuk
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
Published in 2021 IEEE International Solid- State Circuits Conference (ISSCC) (13.02.2021)
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7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate
Seungjae Lee, Jin-yub Lee, Il-han Park, Jongyeol Park, Sung-won Yun, Min-su Kim, Jong-hoon Lee, Minseok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-no Im, Hyejin Yim, Kyung-hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun-wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Hirano, Makoto, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kye-hyun Kyung, Jeong-Hyuk Choi
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
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