Formation and stability of silicides on polycrystalline silicon
Colgan, E.G., Gambino, J.P., Hong, Q.Z.
Published in Materials science & engineering. R, Reports : a review journal (01.02.1996)
Published in Materials science & engineering. R, Reports : a review journal (01.02.1996)
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Journal Article
Salicides: materials, scaling and manufacturability issues for future integrated circuits ( invited)
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Journal Article
Conference Proceeding
Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies
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Journal Article
Conference Proceeding
Scaled CMOS technologies with low sheet resistance at 0.06-μm gate lengths
Kittl, J.A., Hong, Q.Z., Rodder, M., Breedijk, T.
Published in IEEE electron device letters (01.05.1998)
Published in IEEE electron device letters (01.05.1998)
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Journal Article
Advanced salicides for 0.10 μm CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2
Kittl, J.A., Hong, Q.Z., Yang, H., Yu, N., Samavedam, S.B., Gribelyuk, M.A.
Published in Thin solid films (01.11.1998)
Published in Thin solid films (01.11.1998)
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Journal Article
Thermal stability of silicide on polycrystalline Si
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Conference Proceeding
Journal Article
Thermal stability of Al/barrier/TiSi x multilayer structures
Lu, J.P, Hsu, W.Y, Hong, Q.Z, Dixit, G.A, Luttmer, J.D, Havemann, R.H, Chen, P.J, Tsai, H.L, Magel, L.K
Published in Thin solid films (1998)
Published in Thin solid films (1998)
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Journal Article
A novel process for fabricating conformal and stable TiN-based barrier films
LU, J. P, HSU, W. Y, HONG, Q. Z, DIXIT, G. A, LUTTMER, J. D, HAVEMANN, R. H, MAGEL, L. K
Published in Journal of the Electrochemical Society (01.12.1996)
Published in Journal of the Electrochemical Society (01.12.1996)
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Journal Article
Thermal stability of Al/barrier/TiSix multilayer structures
LU, J. P, HSU, W. Y, HONG, Q. Z, DIXIT, G. A, LUTTMER, J. D, HAVEMANN, R. H, CHEN, P. J, TSAI, H. L, MAGEL, L. K
Published in Thin solid films (04.05.1998)
Published in Thin solid films (04.05.1998)
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Conference Proceeding
Journal Article
Study Of Integration Issues Of Ti Salicide Process With Preamorphization For Sub-0.18 /spl mu/m Gate Length CMOS Technologies
Kittl, J.A., Chatterjee, A., Chen, I.-C., Dixit, G.A., Apte, P.P., Prinslow, D.A., Hong, Q.Z.
Published in Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications (1997)
Published in Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications (1997)
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Conference Proceeding
A 65 nm CMOS technology for mobile and digital signal processing applications
Chatterjee, A., Yoon, J., Zhao, S., Tang, S., Sadra, K., Crank, S., Mogul, H., Aggarwal, R., Chatterjee, B., Lytle, S., Lin, C.T., Lee, K.D., Kim, J., Hong, Q.Z., Kim, T., Olsen, L., Quevedo-Lopez, M., Kirmse, K., Zhang, G., Meek, C., Aldrich, D., Mair, H., Mehrotra, M., Adam, L., Mosher, D., Yang, J.Y., Crenshaw, D., Williams, B., Jacobs, J., Jain, M., Rosal, J., Houston, T., Wu, J., Nagaraj, N.S., Scott, D., Ashburn, S., Tsao, A.
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
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Conference Proceeding
CoSi/sub 2/ with low diode leakage and low sheet resistance at 0.065 /spl mu/m gate length
Hong, Q.Z., Shiau, W.T., Yang, H., Kittl, J.A., Chao, C.P., Tsai, H.L., Krishnan, S., Chen, I.C., Havemann, R.H.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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Conference Proceeding