Optoelectronic Characteristics of Direct-Current and Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Silicon Nitride Film
YEH, Rong-Hwei, YU, Tai-Rong, CHUNG, Te-Cheng, LO, Shih-Yung, HONG, Jyh-Wong
Published in IEEE transactions on electron devices (01.04.2008)
Published in IEEE transactions on electron devices (01.04.2008)
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Effects of Hydrogenation on Optoelectronic Properties of a-C:H Thin-Film White-Light-Emitting Diodes With Composition-Graded Carrier-Injection Layers
LO, Shih-Yung, YEH, Rong-Hwei, YU, Tai-Rong, HONG, Jyh-Wong
Published in IEEE transactions on electron devices (01.01.2009)
Published in IEEE transactions on electron devices (01.01.2009)
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Characteristics of MSM photodetectors with trench electrodes on p-type Si wafer
Laih, Li-Hong, Chang, Tien-Chang, Chen, Yen-Ann, Tsay, Wen-Chin, Hong, Jyh-Wong
Published in IEEE transactions on electron devices (01.09.1998)
Published in IEEE transactions on electron devices (01.09.1998)
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Improvement of current injection of porous silicon
CHEN, Y.-A, LIANG, N.-Y, LAIH, L.-H, TSAY, W.-C, CHANG, M.-N, HONG, J.-W
Published in Japanese Journal of Applied Physics (01.03.1997)
Published in Japanese Journal of Applied Physics (01.03.1997)
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Conference Proceeding
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Improving the transient response of a Si metal-semiconductor-metal photodetector with an additional i-a-SiGe:H film
LAIH, L.-H, WANG, J.-C, CHEN, Y.-A, TSAY, W.-C, JEN, T.-S, CHEN, J.-S, HONG, J.-W
Published in Japanese Journal of Applied Physics (01.03.1997)
Published in Japanese Journal of Applied Physics (01.03.1997)
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Conference Proceeding
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Voltage-tunable SiO2-isolated a-SiC:H and/or a-SiN:H p–i–n thin-film LEDs fabricated on c-Si
Yeh, Rong-Hwei, Liu, Wen-Hsiung, Lo, Shih-Yung, Hong, Jyh-Wong
Published in Solid-state electronics (01.09.2006)
Published in Solid-state electronics (01.09.2006)
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Studies on reducing leakage current of large-area silicon microstrip sensors
Wen-Chin Tsay, Yen-Ann Chen, Li-Hong Laih, Jyh-Wong Hong, Chen, A.E., Lin, W.T., Yuan-Hann Chang, Hou, S.R., Chung-Ren Li, Hsien-Jen Ting, Wei-Chen Liang, Cheng, C.C.P., Song-Tsang Chiang
Published in IEEE transactions on nuclear science (01.04.1998)
Published in IEEE transactions on nuclear science (01.04.1998)
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Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface
Jen, Tean-Sen, Pan, Jen-Wei, Shin, Nerng-Fu, Hong, Jyh-Wong, Chang, Chun-Yen
Published in IEEE transactions on electron devices (01.10.1994)
Published in IEEE transactions on electron devices (01.10.1994)
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Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer
CHEN, Y.-A, CHEN, J.-K, TSAY, W.-C, LAIH, L.-H, HONG, J.-W, CHANG, C.-Y
Published in Japanese Journal of Applied Physics (01.02.1996)
Published in Japanese Journal of Applied Physics (01.02.1996)
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Conference Proceeding
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Hydrogenated amorphous silicon carbide P-I-N thin-film light-emitting diodes with barrier layers inserted at P-I interface
Jen, Tean-Sen, Pan, Jen-Wei, Shin, Nerng-Fu, Tsay, Wen-Chin, Chang, Jyh-Wong Hong
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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Conference Proceeding
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Amorphous silicon/silicon carbide superlattice avalanche photodiodes
Jwo, S.-C., Wu, M.-T., Chen, J.-K., Hong, J.-W., Chang, C.-Y.
Published in IEEE transactions on electron devices (01.08.1988)
Published in IEEE transactions on electron devices (01.08.1988)
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