Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz
Lenox, C., Nie, H., Yuan, P., Kinsey, G., Homles, A.L., Streetman, B.G., Campbell, J.C.
Published in IEEE photonics technology letters (01.09.1999)
Published in IEEE photonics technology letters (01.09.1999)
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