Low-noise avalanche photodiodes with graded impact-ionization-engineered multiplication region
Wang, S., Sidhu, R., Zheng, X.G., Li, X., Sun, X., Holmes, A.L., Campbell, J.C.
Published in IEEE photonics technology letters (01.12.2001)
Published in IEEE photonics technology letters (01.12.2001)
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Journal Article
Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates
Wang, S., Hurst, J.B., Ma, F., Sidhu, R., Sun, X., Zheng, X.G., Holmes, A.L., Huntington, A., Coldren, L.A., Campbell, J.C.
Published in IEEE photonics technology letters (01.12.2002)
Published in IEEE photonics technology letters (01.12.2002)
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Journal Article
Ultra-low noise avalanche photodiodes with a "centered-well" multiplication region
Shuling Wang, Feng Ma, Xiaowei Li, Sidhu, R., XiaoGuang Zheng, Xiaoguang Sun, Holmes, A.L., Campbell, J.C.
Published in IEEE journal of quantum electronics (01.02.2003)
Published in IEEE journal of quantum electronics (01.02.2003)
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Journal Article
Interplay of Rabi oscillations and quantum interference in semiconductor quantum dots
Htoon, H, Takagahara, T, Kulik, D, Baklenov, O, Holmes, Jr, A L, Shih, C K
Published in Physical review letters (25.02.2002)
Published in Physical review letters (25.02.2002)
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Journal Article
Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission
Huang, J Y T, Mawst, L J, Kuech, T F, Song, X, Babcock, S E, Kim, C S, Vurgaftman, I, Meyer, J R, Holmes, A L
Published in Journal of physics. D, Applied physics (21.01.2009)
Published in Journal of physics. D, Applied physics (21.01.2009)
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Journal Article
Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots
Liu, N, Tersoff, J, Baklenov, O, Holmes, Jr, AL, Shih, CK
Published in Physical review letters (10.01.2000)
Published in Physical review letters (10.01.2000)
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Journal Article
A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells
Sidhu, R., Ning Duan, Campbell, J.C., Holmes, A.L.
Published in IEEE photonics technology letters (01.12.2005)
Published in IEEE photonics technology letters (01.12.2005)
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Journal Article
2.4mum cutoff wavelength avalanche photodiode on InP substrate
Sidhu, R, Zhang, L, Tan, N, Duan, N, Campbell, J C, Holmes Jr, A L, Hsu, C-F, Itzler, M A
Published in Electronics letters (02.02.2006)
Published in Electronics letters (02.02.2006)
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Journal Article
GaAsSb resonant-cavity-enhanced photodetector operating at 1.3 micron
Sun, X, Hsu, J, Zheng, X G, Campbell, J C, Holmes Jr, A L
Published in IEEE photonics technology letters (01.05.2002)
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Published in IEEE photonics technology letters (01.05.2002)
Journal Article
Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses
Yuan, P., Hansing, C.C., Anselm, K.A., Lenox, C.V., Nie, H., Holmes, A.L., Streetman, B.G., Campbell, J.C.
Published in IEEE journal of quantum electronics (01.02.2000)
Published in IEEE journal of quantum electronics (01.02.2000)
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Journal Article
Avalanche photodiodes with an impact-ionization-engineered multiplication region
Yuan, P., Wang, S., Sun, X., Zheng, X.G., Holmes, A.L., Campbell, J.C.
Published in IEEE photonics technology letters (01.10.2000)
Published in IEEE photonics technology letters (01.10.2000)
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Journal Article
A study of low-bias photocurrent gradient of avalanche photodiodes
Shuling Wang, Sidhu, R., Karve, G., Feng Ma, Xiaowei Li, Xiao Guang Zheng, Hurst, J.B., Xiaoguang Sun, Ning Li, Holmes, A.L., Campbell, J.C.
Published in IEEE transactions on electron devices (01.12.2002)
Published in IEEE transactions on electron devices (01.12.2002)
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Journal Article
GaAsSb: a novel material for near infrared photodetectors on GaAs substrates
Xiaoguang Sun, Shuling Wang, Hsu, J.S., Sidhu, R., Zheng, X.G., Xiaowei Li, Campbell, J.C., Holmes, A.L.
Published in IEEE journal of selected topics in quantum electronics (01.07.2002)
Published in IEEE journal of selected topics in quantum electronics (01.07.2002)
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Journal Article
GaAsSb resonant-cavity-enhanced photodetector operating at 1.3 μm
Sun, X., Hsu, J., Zheng, X.G., Campbell, J.C., Holmes, A.L.
Published in IEEE photonics technology letters (01.05.2002)
Published in IEEE photonics technology letters (01.05.2002)
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Journal Article
High-speed and low-noise avalanche photodiode operating at 1.06 mu m
Yuan, P, Baklenov, O, Nie, H, Holmes, AL Jr, Streetman, B G, Campbell, J C
Published in IEEE journal of selected topics in quantum electronics (01.05.2000)
Published in IEEE journal of selected topics in quantum electronics (01.05.2000)
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Journal Article
Waveguide In sub(0.53)Ga sub(0.47)As-In sub(0.52)Al sub(0.48)As avalanche photodiode
Kinsey, G S, Hansing, C C, Holmes, AL Jr, Streetman, B G, Campbell, J C, Dentai, A G
Published in IEEE photonics technology letters (01.01.2000)
Published in IEEE photonics technology letters (01.01.2000)
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Journal Article