Search Results - "Hoke, William E" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

AlGaN/GaN HEMT With 300-GHz fmax

AlGaN/GaN HEMT With 300-GHz fmax

by CHUNG, Jinwook W, HOKE, William E, CHUMBES, Eduardo M, PALACIOS, Tomds
Published in IEEE electron device letters (01.03.2010)

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Journal Article

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS

by HOKE WILLIAM E
Year of Publication 18.01.2016

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Patent

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS

by HOKE WILLIAM E
Year of Publication 24.04.2014

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Patent

연속적으로 감소된 결정학적 전위 밀도 영역을 갖는 III족-질화물 구조체

연속적으로 감소된 결정학적 전위 밀도 영역을 갖는 III족-질화물 구조체

by KENNEDY THEODORE D, KERR AMANDA, HOKE WILLIAM E, SCHULTZ BRIAN D
Year of Publication 30.10.2019

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Patent

SEMICONDUCTOR STRUCTURE HAVING SILICON CMOS TRANSISTORS WITH COLUMN III-V TRANSISTORS ON COMMON SUBSTRATE

SEMICONDUCTOR STRUCTURE HAVING SILICON CMOS TRANSISTORS WITH COLUMN III-V TRANSISTORS ON COMMON SUBSTRATE

by HOKE WILLIAM E, JEFFREY R LAROCHE
Year of Publication 18.06.2015

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Patent

AlGaN/GaN HEMT With 300-GHz f

AlGaN/GaN HEMT With 300-GHz f

by Chung, J.W., Hoke, W.E., Chumbes, E.M., Palacios, T.
Published in IEEE electron device letters (01.03.2010)

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Journal Article

Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes

Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes

by Jae-Hyung Jang, Cueva, G., Hoke, W.E., Lemonias, P.J., Fay, P., Adesida, I.
Published in Journal of lightwave technology (01.03.2002)

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Journal Article

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

Millimeter-wave low-noise and high-power metamorphic HEMT amplifiers and devices on GaAs substrates

by Whelan, C.S., Kazior, T.E., Marsh, P.F., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Lemonias, P.J., Lardizabal, S.M., Leoni, R.E., Lichwala, S.J.
Published in IEEE journal of solid-state circuits (01.09.2000)

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Journal Article

AlGaN/GaN HEMT With 300-GHz f max

AlGaN/GaN HEMT With 300-GHz f max

by Chung, Jinwook W, Hoke, William E, Chumbes, Eduardo M, Palacios, Tomas
Published in IEEE electron device letters (01.03.2010)

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Journal Article

AlGaN/GaN HEMT With 300-GHz [Formula Omitted]

AlGaN/GaN HEMT With 300-GHz [Formula Omitted]

by Chung, Jinwook W, Hoke, William E, Chumbes, Eduardo M, Palacios, Tomás
Published in IEEE electron device letters (01.03.2010)

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Journal Article

Temperature Dependent Thermal Resistances at GaN-Substrate Interfaces in GaN Composite Substrates

Temperature Dependent Thermal Resistances at GaN-Substrate Interfaces in GaN Composite Substrates

by Jungwan Cho, Yiyang Li, Altman, D. H., Hoke, W. E., Asheghi, M., Goodson, K. E.
Published in 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2012)

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Conference Proceeding

DOPED BARRIER LAYERS IN EPITAXIAL GROUP III NITRIDES

DOPED BARRIER LAYERS IN EPITAXIAL GROUP III NITRIDES

by HOKE, William E, CHUMBES, Eduardo M, REZA, Shahed, SCHULTZ, Brian D, TORABI, Abbas
Year of Publication 17.08.2022

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Patent

Self-report as a validity check for the Lüscher Color Test

Self-report as a validity check for the Lüscher Color Test

by Ledford, R S, Hoke, W E
Published in Perceptual and motor skills (01.10.1981)

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Journal Article

STRUCTURE HAVING MONOLITHIC HETEROGENEOUS INTEGRATION OF COMPOUND SEMICONDUCTORS WITH ELEMENTAL SEMICONDUCTOR

STRUCTURE HAVING MONOLITHIC HETEROGENEOUS INTEGRATION OF COMPOUND SEMICONDUCTORS WITH ELEMENTAL SEMICONDUCTOR

by KAZIOR, Thomas, E, HOKE, William, E, LAROCHE, Jeffrey, R
Year of Publication 15.04.2020

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Patent

Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices

Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices

by HOKE WILLIAM E
Year of Publication 02.09.2014

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Patent

SEMICONDUCTOR STRUCTURE HAVING SILICON DEVICES, COLUMN III-NITRIDE DEVICES, AND COLUMN III-NON-NITRIDE OR COLUMN II-VI DEVICES

SEMICONDUCTOR STRUCTURE HAVING SILICON DEVICES, COLUMN III-NITRIDE DEVICES, AND COLUMN III-NON-NITRIDE OR COLUMN II-VI DEVICES

by HOKE, WILLIAM, E
Year of Publication 28.08.2014

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Patent

SEMICONDUCTOR STRUCTURE HAVING SILICON DEVICES, COLUMN III-NITRIDE DEVICES, AND COLUMN III-NON-NITRIDE OR COLUMN II-VI DEVICES

SEMICONDUCTOR STRUCTURE HAVING SILICON DEVICES, COLUMN III-NITRIDE DEVICES, AND COLUMN III-NON-NITRIDE OR COLUMN II-VI DEVICES

by HOKE WILLIAM E
Year of Publication 21.08.2014

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Patent

POLARIZATION EFFECT CARRIER GENERATING DEVICE STRUCTURES HAVING COMPENSATION DOPING TO REDUCE LEAKAGE CURRENT

POLARIZATION EFFECT CARRIER GENERATING DEVICE STRUCTURES HAVING COMPENSATION DOPING TO REDUCE LEAKAGE CURRENT

by HOKE, WILLIAM E
Year of Publication 10.07.2014

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Patent

POLARIZATION EFFECT CARRIER GENERATING DEVICE STRUCTURES HAVING COMPENSATION DOPING TO REDUCE LEAKAGE CURRENT

POLARIZATION EFFECT CARRIER GENERATING DEVICE STRUCTURES HAVING COMPENSATION DOPING TO REDUCE LEAKAGE CURRENT

by HOKE WILLIAM E
Year of Publication 03.07.2014

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Patent

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS

SEMICONDUCTOR STRUCTURES HAVING NUCLEATION LAYER TO PREVENT INTERFACIAL CHARGE FOR COLUMN III-V MATERIALS ON COLUMN IV OR COLUMN IV-IV MATERIALS

by HOKE, WILLIAM, E
Year of Publication 26.02.2014

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Patent

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