Low noise In/sub 0.32/(AlGa)/sub 0.68/As/In/sub 0.43/Ga/sub 0.57/As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density
Whelan, C.S., Hoke, W.F., McTaggart, R.A., Lardizabal, M., Lyman, P.S., Marsh, P.F., Kazior, T.E.
Published in IEEE electron device letters (01.01.2000)
Published in IEEE electron device letters (01.01.2000)
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